公开(公告)号：US20220120624A1

公开(公告)日：2022-04-21

申请号：US17427775

申请日：2019-07-23

Applicant: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： June Seo KIM ,  Myoung Jae LEE ,  Hyeon Jun LEE

IPC: G01L1/12 ,  H01F10/32 ,  H01F10/14

Abstract: Disclosed is a force sensor. More particularly, the force sensor includes a first permanent magnet layer; a magnetic tunnel junction disposed on the first permanent magnet layer and configured to have a preset resistance value; and a second permanent magnet layer disposed to be spaced apart from the magnetic tunnel junction, wherein the second permanent magnet layer moves in a direction of the first permanent magnet layer when pressure is applied from outside, the preset resistance value of the magnetic tunnel junction is changed when a magnetic field strength formed between the first permanent magnet layer and the second permanent magnet layer becomes a preset strength or more according to movement of the second permanent magnet layer, and the force sensor senses the pressure based on a change in the preset resistance value.

公开(公告)号：US20240389361A1

公开(公告)日：2024-11-21

申请号：US18572263

申请日：2023-01-04

Applicant: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyeon Jun LEE

IPC: H10B63/00 ,  G11C11/56 ,  G11C13/00 ,  H10N70/00 ,  H10N70/20

Abstract: A non-volatile memory device according to various embodiments of the present invention is characterized in that the non-volatile memory device includes a substrate, a first electrode disposed on the substrate, an insulating layer contacting the first electrode, a semiconductor layer contacting the insulating layer, and a second electrode contacting the semiconductor layer, and is driven using an asymmetrical local energy state (ALES) induced in the semiconductor layer under the condition that at least a portion of the first electrode contacts the semiconductor layer.
A method of driving the non-volatile memory device in accordance with various embodiments of the present invention includes inducing an asymmetrical local energy state (ALES) generated due to instantaneous acceleration of electrons injected into the semiconductor layer, and removing the ALES from the semiconductor layer, for recovery of the semiconductor layer.