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公开(公告)号：US20220112353A1
公开(公告)日：2022-04-14
申请号：US17196662
申请日：2021-03-09
Applicant: Dalian University of Technology
Inventor： Zhenyu ZHANG , Yuefeng DU , Dongdong LIU , Liangchao GUO
IPC: C08K3/04
Abstract: The present invention provides a preparation method for ultra-high wear-resistant graphene epoxy resin composites, belonging to the technical field of macroscopic lubrication. The present invention firstly adopts a physical blending method to uniformly mix graphene powder and epoxy resin, and then cures the mixture at high temperature to prepare graphene epoxy resin composites with ultra-low wear rate. The present invention adopts a solution blending method to uniformly combine graphene and epoxy resin, improving the friction and wear performance of epoxy resin and expanding the application of epoxy resin in the field of tribology.
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Patent Agency Ranking
公开(公告)号：US20210116404A1
公开(公告)日：2021-04-22
申请号：US17061536
申请日：2020-10-01
Applicant: DALIAN UNIVERSITY OF TECHNOLOGY
Inventor： Zhenyu ZHANG , Qun ZHANG , Quan SHI
Abstract: The present invention discloses a multi-screen supporting device in a high-temperature adiabatic calorimeter, and belongs to a calorimeter device in calorimetry. The multi-screen supporting device comprises a vacuum tank, three layers of protecting screens, two layers of thermal insulation screens, a protecting screen supporter for supporting and fixing the protecting screens, a thermal insulation screen supporter for supporting and fixing the thermal insulation screens, and a connecting piece for connecting and fixing the protecting screen supporter and the thermal insulation screen supporter. The multi-screen supporting mode in the high-temperature calorimeter solves the problems of time consumption for disassembling and assembling, low multi-screen assembling coaxiality and reduced experimental repeatability caused by many parts moved in each disassembling and assembling in the existing high-temperature calorimeter. The multi-screen supporting mode is easy in part processing, high in disassembling and assembling efficiency and convenient in operation, and effectively improves the experimental repeatability.
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公开(公告)号：US20210080361A1
公开(公告)日：2021-03-18
申请号：US16761345
申请日：2019-03-13
Applicant: DALIAN UNIVERSITY OF TECHNOLOGY
Inventor： Zhenyu ZHANG , Junfeng CUI , Dongdong LIU
Abstract: A method of in-situ TEM nanoindentation for a damaged layer of silicon is disclosed. Wet etching and ion beam lithography are used for preparing a silicon wedge sample. An etched silicon wedge is thinned and trimmed by a focused ion beam; thinning uses ion beam of 30 kV: 50-80 nA, and trimming uses ion beam of 5 kV: 1-6 pA; and the top width of the silicon wedge is 80-100 nm. The sample is fixed on a sample holder of an in-situ TEM nanomechanical system by using a conductive silver adhesive. The sample is indented with a tip in the TEM, so that the thickness of the damaged layer of the sample is 2-200 nm; and an in-situ nanoindentation experiment is conducted on the damaged layer of the sample in the TEM.
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4.发明申请公开(公告)号：US20200081033A1
公开(公告)日：2020-03-12
申请号：US16339907
申请日：2017-11-15
Applicant: Dalian University of Technology
Inventor： Zhenyu ZHANG , Junfeng CUI , Bo WANG , Dongming GUO
Abstract: The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 μm, a tip curvature radius of 0.8-3 μm and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 μm. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires. The tip of the tapered hair is dipped in a small drop of conductive silver epoxy, and the conductive silver epoxy is respectively dropped on both ends of the nanowires; and the radius of the dropped conductive silver epoxy is 4-8 μm. The present invention realizes a method for moving and transferring nanowires using tapered hair through the mobile platforms of the two optical microscopes.
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公开(公告)号：US20200080921A1
公开(公告)日：2020-03-12
申请号：US16340356
申请日：2017-11-15
Applicant: DALIAN UNIVERSITY OF TECHNOLOGY
Inventor： Zhenyu ZHANG , Junfeng CUI , Yuefeng DU , Dongming GUO
Abstract: A self-healing method for fractured SiC single crystal nanowires. A hair in a Chinese brush pen of yellow weasel's hair moves and transfers nanowires, which are placed on an in-situ TEM mechanical microtest apparatus. An in-situ nanomechanical tension test is realized. The nanowires are loaded. Displacement is 0-200 nm. Fracture strength of the single crystal nanowires is 12-15 GPa. After the nanowires are fractured, unloading causes slight contact between the fractured end surfaces, electron beam is shut off, and self-healing of the nanowires is conducted in a vacuum chamber. Partial recrystallization is found at a fracture after self-healing through in-situ TEM representation. A fracture strength test is conducted again after self-healing. A fractured position after healing is the same as the position before healing. The fracture strength of the single crystal nanowires after self-healing is 1-2.5 GPa. The recovery ratio of the fracture strength is 10-20%.
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公开(公告)号：US20200018670A1
公开(公告)日：2020-01-16
申请号：US16339689
申请日：2017-11-15
Applicant: DALIAN UNIVERSITY OF TECHNOLOGY
Inventor： Zhenyu ZHANG , Junfeng CUI , Leilei CHEN , Dongming GUO
IPC: G01N3/08 , C01B32/956
Abstract: The present invention provides a self-healing method for fractured SiC amorphous nanowires. A goat hair in a Chinese brush pen of goat hair moves and transfers single crystal nanowires under an optical microscope. On an in-situ nanomechanical test system of a TEM, local single crystal nanowires are irradiated with an electron beam for conducting amorphization transformation. Amorphous length of a single crystal after transformation is 60-100 nm. A fracture strength test is conducted on the amorphous nanowires in the single crystal after transformation in the TEM; and fracture strength of the amorphous nanowires is 9-11 GPa. After the amorphous nanowires are fractured, unloading causes a slight contact between the fractured end surfaces; and self-healing of the nanowires is conducted after waiting for 16-25 min in a vacuum chamber of the TEM. Atom diffusion is found at a healed fracture through in-situ TEM representation; and recrystallization is found in the amorphous nanowires. The present invention provides a method for realizing self-healing for fractured SiC amorphous nanowires without external intervention.
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