公开(公告)号：US20160123828A1

公开(公告)日：2016-05-05

申请号：US14895228

申请日：2014-05-08

Applicant: DANFOSS A/S

Inventor： Steen Moellebjerg Matzen

IPC: G01L9/00

CPC classification number: G01L9/0055 ,  G01L9/04

Abstract: A sensor (1) comprising a membrane, an isolation layer (3) arranged on the membrane, measuring electronics comprising a thin film circuit (4), e.g. in the form of a Wheatstone bridge, deposited on the isolation layer (3), and a power supply (14) arranged to supply a quasi-DC voltage to the thin film circuit (4) is disclosed. The sensor (1) is cost effective to manufacture, due to the thin film circuit (4), and corrosion effects are avoided, without having to apply a coating or passivation layer onto the thin film circuit (4), due to the quasi-DC voltage being supplied to the thin film circuit (4).

Abstract translation: 包括膜的传感器（1），布置在膜上的隔离层（3），测量电子器件包括薄膜电路（4），例如薄膜电路。 公开了以薄片电路（4）提供准直流电压的电源（14），其形式为沉积在隔离层（3）上的惠斯登电桥形式。 由于薄膜电路（4），传感器（1）由于薄膜电路（4）的制造而具有成本效益，并且避免了腐蚀效应，而不必在薄膜电路（4）上施加涂层或钝化层， DC电压被提供给薄膜电路（4）。

公开(公告)号：US09909944B2

公开(公告)日：2018-03-06

申请号：US14895228

申请日：2014-05-08

Applicant: DANFOSS A/S

Inventor： Steen Moellebjerg Matzen

IPC: G01L9/00 ,  G01L9/04

CPC classification number: G01L9/0055 ,  G01L9/04

Abstract: A sensor (1) comprising a membrane, an isolation layer (3) arranged on the membrane, measuring electronics comprising a thin film circuit (4), e.g. in the form of a Wheatstone bridge, deposited on the isolation layer (3), and a power supply (14) arranged to supply a quasi-DC voltage to the thin film circuit (4) is disclosed. The sensor (1) is cost effective to manufacture, due to the thin film circuit (4), and corrosion effects are avoided, without having to apply a coating or passivation layer onto the thin film circuit (4), due to the quasi-DC voltage being supplied to the thin film circuit (4).

公开(公告)号：US20150309083A1

公开(公告)日：2015-10-29

申请号：US14649769

申请日：2013-11-28

Applicant: Danfoss A/S

Inventor： Steen Moellebjerg Matzen

IPC: G01R17/10 ,  G01L1/18

CPC classification number: G01R17/10 ,  G01L1/18 ,  G01L1/2262 ,  G01L9/0054 ,  G01L9/06

Abstract: A sensor (1) comprising an n-dosed/p-dosed substrate (2), and a Wheatstone bridge (3) arranged on the substrate (2) is disclosed. A field shield (4) is arranged on the substrate (2) in such a manner that the field shield (4) covers the Wheatstone bridge (3). A quasi-DC voltage is supplied to the Wheatstone bridge (3), and a DC voltage is supplied to the substrate (2), the level of said DC voltage being higher/lower than or equal to the quasi-DC voltage supplied to the Wheatstone bridge (3). A voltage may be supplied to the field shield (4), the level of said voltage being higher/lower than or equal to the quasi-DC voltage supplied to the Wheatstone bridge (3).

Abstract translation: 公开了一种传感器（1），包括n型/ p型衬底（2）和布置在衬底（2）上的惠斯通电桥（3）。 场屏蔽（4）以这样的方式设置在基板（2）上，使得屏蔽罩（4）覆盖惠斯通电桥（3）。 向惠斯通电桥（3）提供准直流电压，向基板（2）供给直流电压，所述直流电压的电平高于或等于提供给基准电压的准直流电压 惠斯通电桥（3）。 可以向场屏蔽（4）提供电压，所述电压的电平高于或等于提供给惠斯通电桥（3）的准直流电压。