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公开(公告)号:US20230113551A1
公开(公告)日:2023-04-13
申请号:US17909659
申请日:2021-02-01
Applicant: DENKA COMPANY LIMITED
Inventor: Kazuya SUGITA , Taiyo YAMAURA , Tomohiro NOMIYAMA
Abstract: A phosphor plate includes a plate-like composite including an inorganic base material, which is a sintered material of two or more types of metal oxide including SiO2, and a phosphor contained in the inorganic base material, in which the phosphor includes an α-type sialon phosphor, and in a case in which intensity of transmitted light at a wavelength of 455 nm and intensity of reflected light at a wavelength of 455 nm of the phosphor plate are denoted by T1 and R1, respectively, T1 and R1 satisfy 1.5×10−2≤T1/R1≤5.0×10−2.
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公开(公告)号:US20210324267A1
公开(公告)日:2021-10-21
申请号:US17272878
申请日:2019-08-22
Applicant: DENKA COMPANY LIMITED
Inventor: Kazuya SUGITA , Yusuke TAKEDA , Keita KOBAYASHI , Akihisa KAJIYAMA
Abstract: A phosphor which has a main crystal phase having the same crystal structure as that of CaAlSiN3, wherein the phosphor satisfies conditions of a span value (d90−d10)/d50 of 1.70 or less and a d50 of 10.0 μm or less, as represented with d10, d50, and d90 on a volume frequency measured according to a laser diffraction method; wherein the d10, d50, and d90 on a volume frequency in a particle distribution measured are each a measured by loading 0.5 g of a phosphor into 100 ml of a solution of 0.05% by weight of sodium hexametaphosphate mixed in ion exchange water, and subjecting the resultant to a dispersing treatment for 3 minutes with an ultrasonic homogenizer at an oscillation frequency of 19.5±1 kHz, a chip size of 20φ, and an amplitude of vibration of 32±2 μm, with a chip placed at a central portion.
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公开(公告)号:US20210189234A1
公开(公告)日:2021-06-24
申请号:US17272827
申请日:2019-08-22
Applicant: DENKA COMPANY LIMITED
Inventor: Keita KOBAYASHI , Shunsuke MITANI , Ryousuke KONDO , Kazuya SUGITA , Takuya MATSUFUJI , Akihisa KAJIYAMA
Abstract: A β-type sialon phosphor represented by the following expression 1, in which D50 is 10 μm or less, and values of D10, D50, and D90 satisfy a relationship of the following expression 2 with respect to D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to a laser diffraction/scattering method. Expression 1: Si12-aAlaObN16-b:Eux (wherein 0
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