POWER SUPPLY APPARATUS
    1.
    发明申请
    POWER SUPPLY APPARATUS 有权
    电源设备

    公开(公告)号:US20150180326A1

    公开(公告)日:2015-06-25

    申请号:US14535381

    申请日:2014-11-07

    CPC classification number: H02M1/32 G01R19/00 G05F1/575 G05F1/618 H02M3/1563

    Abstract: In a power supply apparatus, power is transmitted from its input terminal to its output terminal. The transmitted power is controlled so that an output voltage detected in a predetermined ratio can be equal to a reference voltage. A reduction signal is outputted when the output voltage decreases below a threshold. A presence or absence of an abnormality in a capacitance connected to the output terminal or a load current in a load connected to the output terminal is determined, when the output voltage is equal to the target voltage, by changing at least one of the detection ratio and the reference voltage so that the output voltage can transition from a target voltage higher than the threshold toward a middle voltage lower than the threshold only during a predetermined time period.

    Abstract translation: 在电源装置中,电力从其输入端子发送到其输出端子。 控制发射功率使得以预定比例检测的输出电压可以等于参考电压。 当输出电压降低到阈值以下时,输出减小信号。 当输出电压等于目标电压时,确定连接到输出端子的电容中存在或不存在与连接到输出端子的负载中的负载电流有异常的情况,通过改变至少一个检测比 以及参考电压,使得输出电压可以在预定时间段内仅从高于阈值的目标电压转移到低于阈值的中间电压。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20160313178A1

    公开(公告)日:2016-10-27

    申请号:US15099978

    申请日:2016-04-15

    Inventor: Mutsuya MOTOJIMA

    CPC classification number: G01J1/4228 B60S1/0837 G01J1/0204 G01J2001/446

    Abstract: A semiconductor device includes light receiving elements, selection switches, a light receiving circuit and a control circuit. Each light receiving element receives a light and outputs a detection signal according to an intensity of the light. The selection switches are correspondingly provided for the light receiving elements. Each selection switch selectively allows the detection signal to be outputted. The light receiving circuit includes a capacitive coupling element and an amplifying circuit. The light receiving circuit is provided for a prescribed number of the light receiving elements and connected to the light receiving elements through the selection switches. The control circuit switches the selection switches sequentially so that the detection signals of the light receiving elements are received in the light receiving circuit through the capacitive coupling element. The control circuit controls the light receiving circuit to process the detection signals by amplifying the detection signals by the amplifying circuit.

    Abstract translation: 半导体器件包括光接收元件,选择开关,光接收电路和控制电路。 每个光接收元件接收光并根据光的强度输出检测信号。 相应地,为光接收元件提供选择开关。 每个选择开关选择性地允许输出检测信号。 光接收电路包括电容耦合元件和放大电路。 光接收电路被设置用于规定数量的光接收元件,并通过选择开关连接到光接收元件。 控制电路顺序地切换选择开关,使得光接收元件的检测信号通过电容耦合元件被接收在光接收电路中。 控制电路通过放大电路放大检测信号来控制光接收电路来处理检测信号。

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20210242318A1

    公开(公告)日:2021-08-05

    申请号:US17238587

    申请日:2021-04-23

    Inventor: Mutsuya MOTOJIMA

    Abstract: A semiconductor device includes a semiconductor layer, a source region, a drain region, a gate electrode, a first electrode, and a second electrode. The semiconductor layer has a main surface. The semiconductor layer generates a channel close to the main surface along one direction of the main surface. The source region and the drain region are disposed in a surface layer of the semiconductor layer. A portion where the channel is generated is disposed between the source region and the drain region. The gate electrode is disposed above the channel and along the one direction. The first electrode is connected to a region of the main surface corresponding to the source region. The second electrode is connected to a region of the main surface corresponding to the drain region.

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20190237457A1

    公开(公告)日:2019-08-01

    申请号:US16377563

    申请日:2019-04-08

    Abstract: A semiconductor device configures a protection element that protects a protection target element connected between a cathode electrode and an anode electrode when a parasitic transistor configured by a cathode region, a first conductivity type well layer, and a second conductivity type well is turned on and electrical continuity is established between the cathode electrode and the anode electrode. The semiconductor device includes a plurality of body regions in one cell of the protection element, and the plurality of body regions is brought in contact with the cathode electrode.

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