公开(公告)号：US11145515B2

公开(公告)日：2021-10-12

申请号：US16662329

申请日：2019-10-24

Applicant: DENSO CORPORATION

Inventor： Shuntaro Yamada ,  Akinori Kanda ,  Tetsuo Yoshioka ,  Takashige Nagao ,  Kouichi Miyashita

IPC: H01L21/304 ,  H01L21/78 ,  H01L29/06

Abstract: In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.