公开(公告)号：US20150118849A1

公开(公告)日：2015-04-30

申请号：US14391038

申请日：2013-04-19

Applicant: DENSO CORPORATION

Inventor： Youhei Oda ,  Yoshitaka Noda

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/30655 ,  H01L21/308

Abstract: A trench is etched in a semiconductor wafer by turning a first introduced gas introduced into a reaction chamber into plasma. A protection film is formed on a wall surface of the trench by turning a second introduced gas introduced into the reaction chamber into plasma. The protection film formed on a bottom surface of the trench is removed by turning a third introduced gas introduced into the reaction chamber into plasma. The reaction chamber is evacuated after the protection film formed on the bottom surface of the trench is removed.

Abstract translation: 通过将引入反应室的第一引入气体转化为等离子体，在半导体晶片中蚀刻沟槽。 通过将引入反应室的第二引入气体转换为等离子体，在沟槽的壁表面上形成保护膜。 通过将引入到反应室中的第三引入气体转化为等离子体来除去形成在沟槽的底表面上的保护膜。 在将沟槽底面上形成的保护膜除去后，将反应室抽真空。

公开(公告)号：US09299576B2

公开(公告)日：2016-03-29

申请号：US14391038

申请日：2013-04-19

Applicant: DENSO CORPORATION

Inventor： Youhei Oda ,  Yoshitaka Noda

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/30655 ,  H01L21/308

Abstract: A trench is etched in a semiconductor wafer by turning a first introduced gas introduced into a reaction chamber into plasma. A protection film is formed on a wall surface of the trench by turning a second introduced gas introduced into the reaction chamber into plasma. The protection film formed on a bottom surface of the trench is removed by turning a third introduced gas introduced into the reaction chamber into plasma. The reaction chamber is evacuated after the protection film formed on the bottom surface of the trench is removed.

Abstract translation: 通过将引入反应室的第一引入气体转化为等离子体，在半导体晶片中蚀刻沟槽。 通过将引入反应室的第二引入气体转换为等离子体，在沟槽的壁表面上形成保护膜。 通过将引入到反应室中的第三引入气体转化为等离子体来除去形成在沟槽的底表面上的保护膜。 在将沟槽底面上形成的保护膜除去后，将反应室抽真空。

公开(公告)号：US10479675B2

公开(公告)日：2019-11-19

申请号：US15757672

申请日：2016-09-09

Applicant: DENSO CORPORATION

Inventor： Akira Ogawa ,  Yoshitaka Noda ,  Tetsuo Yoshioka ,  Yuhei Shimizu

IPC: B81C1/00 ,  G01P15/08 ,  G01P15/125

Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.