Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Abstract:
A field emission device in which a protectin vapor is present in an evacuated space between a field emission cathode assembly and an anode. The protectin vapor may be one or more hydrogen-containing gases suc as a gas containing M—H bonds where M may be C, Si, B, Al or P. The protecting vapor has within the evacuated space a partial pressure greater than about 10−8 Torr (1.33×10−6Pe) et 20° C.
Abstract:
Processes for increasing the production rate of single-wall carbon nanotubes using a disordered carbon target are disclosed. The processes use a disordered carbon target and include vaporization of the target in the presence of a non-oxidizing gas. The single-wall nanotubes produced can be incorporated into electronic devices such as diodes and transistors.
Abstract:
A field emission device in which a protecting vapor is present in an evacuated space between a field emission cathode assembly and an anode. The protecting vapor may be one or more hydrogen-containing gases such as a gas containing M—H bonds where M may be C, Si, B, Al or P.
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Abstract:
This invention provides compositions that can be used as positive imageable photoresists. These compositions include positive imageable photopolymer systems and particulate materials. These compositions can be used in thick film and other processes to make films and patterned structures that are useful in producing electronic devices.