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公开(公告)号:US20110151610A1
公开(公告)日:2011-06-23
申请号:US12646407
申请日:2009-12-23
Applicant: Deepak A. RAMAPPA , Ludovic Godet
Inventor: Deepak A. RAMAPPA , Ludovic Godet
IPC: H01L31/18
CPC classification number: H01L31/068 , H01J37/32366 , H01J37/32422 , H01J37/32623 , H01L21/3065 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing may involve etching or localized sputtering using a plasma where a shape of a boundary between the plasma and the plasma sheath is modified with an insulating modifier. The workpiece may be rotated in between etching or sputtering steps to form pyramids. Regions of the workpiece also may be etched or sputtered with ions formed from a plasma adjusted by an insulating modifier and doped. A metal layer may be formed on these doped regions.
Abstract translation: 公开了纹理或制造工件的方法。 工件可以是例如太阳能电池。 这种纹理化可能包括使用等离子体进行蚀刻或局部溅射,其中等离子体和等离子体护套之间的边界的形状用绝缘改性剂改性。 可以在蚀刻或溅射步骤之间旋转工件以形成金字塔。 工件的区域也可以用由通过绝缘改性剂调节的等离子体形成的离子进行蚀刻或溅射并掺杂。 可以在这些掺杂区域上形成金属层。
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公开(公告)号:US20110204264A1
公开(公告)日:2011-08-25
申请号:US12712816
申请日:2010-02-25
Applicant: Deepak A. RAMAPPA
Inventor: Deepak A. RAMAPPA
CPC classification number: H01J37/3171 , H01J37/3002 , H01J37/32412 , H01J37/32422 , H01J2237/04 , H01J2237/2482 , H01J2237/3171
Abstract: Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped.
Abstract translation: 产生的离子产生并指向工件。 激光源产生在工件上方一条线上投射的激光。 当激光产生时,一部分离子被激光器阻挡。 这可以实现工件的选择性植入或修改。 在一个具体实施例中,激光器被产生,而离子被指向工件然后停止。 在激光停止后,离子仍然朝向工件。
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公开(公告)号:US20110127885A1
公开(公告)日:2011-06-02
申请号:US13016525
申请日:2011-01-28
Applicant: Deepak A. RAMAPPA
Inventor: Deepak A. RAMAPPA
IPC: G10K9/122
CPC classification number: H01L21/76254 , H01L21/26506 , H01L21/2658
Abstract: An improved process of substrate cleaving and a device to perform the cleaving are disclosed. In the traditional cleaving process, a layer of microbubbles is created within a substrate through the implantation of ions of a gaseous species, such as hydrogen or helium. The size and spatial distribution of these microbubbles is enhanced through the use of ultrasound energy. The ultrasound energy causes smaller microbubbles to join together and also reduces the straggle. An ultrasonic transducer is acoustically linked with the substrate to facilitate these effects. In some embodiments, the ultrasonic transducer is in communication with the platen, such that ultrasound energy can be applied during ion implantation and/or immediately thereafter. In other embodiments, the ultrasonic energy is applied to the substrate during a subsequent process, such as an anneal.
Abstract translation: 公开了一种改进的基板切割工艺和一种执行切割的装置。 在传统的切割过程中,通过注入气态物质如氢或氦的离子,在衬底内产生一层微泡。 这些微泡的尺寸和空间分布通过使用超声能量来增强。 超声波能量会导致较小的微泡连接在一起,并且还可以减少颤动。 超声换能器与衬底声学连接以促进这些效果。 在一些实施例中,超声波换能器与压板连通,使得在离子注入期间和/或之后立即施加超声波能量。 在其他实施例中,在后续工艺(例如退火)中将超声能量施加到衬底。
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