SWITCH WITH HYSTERESIS
    1.
    发明申请

    公开(公告)号:US20220311438A1

    公开(公告)日:2022-09-29

    申请号:US17648492

    申请日:2022-01-20

    Inventor: Kian Mun HO

    Abstract: Switch circuitry including an input terminal (1), said input terminal connected to the base of a first transistor (Q1) via a first resistor R3, said first transistor being an NPN Bipolar Gate Transistor (Q1), further comprising a second resistor (R5) connected between the base of said first transistor Q1 and ground, and including an output line or terminal (3) connected to the collector of said first transistor (Q1), and wherein the emitter of said first transistor (Q1) is connected to ground (earth), said circuitry further including a second transistor (Q2), said second transistor being a PNP Bipolar Gate Transistor, wherein the collector of said second transistor (Q2) is connected via a third resistor (R8) to the base of said first transistor (Q1), and the emitter of said second transistor Q2 is connected to said input terminal (1), and wherein the emitter of said second transistor (Q2) is additionally connected to the base of said second transistor Q2 via a fourth resistor R11; and the base of said second transistor (Q2) being additionally connected to the output terminal (3) via a fifth resistor (R10) and a diode (D1).

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