公开(公告)号：US20090255820A1

公开(公告)日：2009-10-15

申请号：US12281595

申请日：2007-02-06

Applicant: Denis Buttard

Inventor： Denis Buttard

IPC: H01L21/288 ,  C25B9/00 ,  B23H9/00

CPC classification number: B81C1/00126 ,  B81C2201/0114 ,  C25D1/00 ,  C25D1/006 ,  C25D5/02 ,  C25D5/16 ,  C25D7/12 ,  C25D17/005 ,  C25F3/14 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/31675

Abstract: The invention relates to a method and to a device for electrochemical micro- and/or nano-structuring, which are reliable, fast, simple, easy to implement, and reproducible. For this purpose, the invention provides a method of electrochemically structuring a sample (12) of conductive or semiconductor material that has opposite front and rear faces (11 and 13). The method comprises the steps consisting: in putting at least the front face (11) of the sample (12) into contact with at least one electrolytic solution (4) stored in at least one tank (3); in placing at least one counter-electrode (6) in an electrolyte (4) in register with the front face (11) of the sample (12), said front face (11) being for structuring; in placing at least one working electrode (7) presenting structuring patterns (14) into dry ohmic contact with the rear face (13) of the sample (12); and in applying an electric current between at least one counter-electrode (6) and at one least working electrode (7) that are substantially in register with each other in order to obtain an electrochemical reaction at the interface between the front face (11) of the sample (12) and the electrolyte (4) with current density that is modulated by the structuring patterns (14) of the working electrode (7) in order to perform etching and/or deposition on the front face (11) of the sample (12).

Abstract translation: 本发明涉及电化学微观和/或纳米结构的方法和装置，它们是可靠的，快速的，简单的，易于实现的和可重复的。 为此，本发明提供了一种电化学构造具有相对的前表面和后表面（11和13）的导电或半导体材料的样品（12）的方法。 该方法包括以下步骤：至少将样品（12）的前表面（11）与至少一个储存在至少一个罐（3）中的电解液（4）接触; 在将至少一个对电极（6）放置在与样品（12）的前表面（11）对准的电解质（4）中，所述前表面（11）用于结构化; 在将至少一个工作电极（7）放置成与所述样品（12）的后表面（13）干法欧姆接触的结构图案（14）中; 并且在基本上彼此对准的至少一个对电极（6）和至少一个至少工作电极（7）之间施加电流，以便在所述前表面（11）之间的界面处获得电化学反应， 的样品（12）和电解质（4），其电流密度由工作电极（7）的结构图案（14）调制，以便在所述工作电极（7）的正面（11）上进行蚀刻和/或沉积 样品（12）。

公开(公告)号：US08329017B2

公开(公告)日：2012-12-11

申请号：US12281595

申请日：2007-02-06

Applicant: Denis Buttard

Inventor： Denis Buttard

IPC: C25D5/02 ,  C25D17/00

CPC classification number: B81C1/00126 ,  B81C2201/0114 ,  C25D1/00 ,  C25D1/006 ,  C25D5/02 ,  C25D5/16 ,  C25D7/12 ,  C25D17/005 ,  C25F3/14 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/31675

Abstract: The invention relates to a method and to a device for electrochemical micro- and/or nano-structuring, which are reliable, fast, simple, easy to implement, and reproducible. For this purpose, the invention provides a method of electrochemically structuring a sample (12) of conductive or semiconductor material that has opposite front and rear faces (11 and 13). The method comprises the steps consisting: in putting at least the front face (11) of the sample (12) into contact with at least one electrolytic solution (4) stored in at least one tank (3); in placing at least one counter-electrode (6) in an electrolyte (4) in register with the front face (11) of the sample (12), said front face (11) being for structuring; in placing at least one working electrode (7) presenting structuring patterns (14) into dry ohmic contact with the rear face (13) of the sample (12); and in applying an electric current between at least one counter-electrode (6) and at one least working electrode (7) that are substantially in register with each other in order to obtain an electrochemical reaction at the interface between the front face (11) of the sample (12) and the electrolyte (4) with current density that is modulated by the structuring patterns (14) of the working electrode (7) in order to perform etching and/or deposition on the front face (11) of the sample (12).

Abstract translation: 本发明涉及电化学微观和/或纳米结构的方法和装置，它们是可靠的，快速的，简单的，易于实现的和可重复的。 为此，本发明提供了一种电化学构造具有相对的前表面和后表面（11和13）的导电或半导体材料的样品（12）的方法。 该方法包括以下步骤：至少将样品（12）的前表面（11）与至少一个储存在至少一个罐（3）中的电解液（4）接触; 在将至少一个对电极（6）放置在与样品（12）的前表面（11）对准的电解质（4）中，所述前表面（11）用于结构化; 在将至少一个工作电极（7）放置成与所述样品（12）的后表面（13）干法欧姆接触的结构图案（14）中; 并且在基本上彼此对准的至少一个对电极（6）和至少一个至少工作电极（7）之间施加电流，以便在所述前表面（11）之间的界面处获得电化学反应， 的样品（12）和电解质（4），其电流密度由工作电极（7）的结构图案（14）调制，以便在所述工作电极（7）的正面（11）上进行蚀刻和/或沉积 样品（12）。