Abstract:
According to one embodiment, a substrate polishing method includes: conveying a substrate to a position above a polishing pad by sucking the substrate by a first region of an elastic film; polishing the substrate while bringing the substrate into contact with the polishing pad; and lifting off the substrate by sucking the substrate by a second region of the elastic film, the second region being larger than the first region.
Abstract:
A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface configured to press the substrate against the polishing surface, a retaining ring coupled to the substrate holding surface and configured to surround the substrate, wherein the retaining ring is brought into contact with the polishing surface during operation of the polishing apparatus, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface, the at least one local load exerting mechanism being arranged so as not to move in accordance with the substrate holder.
Abstract:
An elastic membrane capable of precisely controlling a polishing profile in a narrow area of a wafer edge portion is disclosed. The elastic membrane includes a contact portion to be brought into contact with a substrate; a first edge circumferential wall extending upwardly from a peripheral edge of the contact portion; and a second edge circumferential wall having a horizontal portion connected to an inner circumferential surface of the first edge circumferential wall. The inner circumferential surface of the first edge circumferential wall includes an upper inner circumferential surface and a lower inner circumferential surface, both of which are perpendicular to the contact portion, The upper inner circumferential surface extends upwardly from the horizontal portion of the second edge circumferential wall, and the lower inner circumferential surface extends downwardly from the horizontal portion.
Abstract:
A polishing is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to forma substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.
Abstract:
The present invention relates to a technique of calculating a responsiveness of a polishing rate to change in a pressure to press a workpiece, such as a wafer, a substrate, or a panel, for use in manufacturing of semiconductor devices, against a polishing pad. A method includes: performing simulation to calculate a pressing-pressure responsiveness profile indicating a distribution of pressing pressure, which is to be applied from the workpiece to a polishing pad (2), changed in response to a change in unit pressure in the pressure chamber of a polishing head (7); pressing the workpiece against the polishing pad to polish the workpiece, while a predetermined pressure is maintained in the pressure chamber; creating a polishing-rate profile indicating a distribution of polishing rate of the polished workpiece; and creating the polishing-rate responsiveness profile based on the pressing-pressure responsiveness profile, the predetermined pressure, and the polishing-rate profile.
Abstract:
A method capable of accurately obtaining polishing-rate responsiveness to a change in pressure for pressing a workpiece, such as a wafer, against a polishing pad is disclosed. The method includes: creating an estimated polishing-rate responsiveness profile using simulation, the estimated polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the first pressure chamber; creating an actual polishing-rate responsiveness profile using polishing results of a workpiece, the actual polishing-rate responsiveness profile indicating a distribution of polishing-rate responsiveness to pressure change in the second pressure chamber, and creating a hybrid polishing-rate responsiveness profile by combining the estimated polishing-rate responsiveness profile and the actual polishing-rate responsiveness profile.
Abstract:
A substrate holding apparatus which can adjust polishing profile precisely is disclosed. The substrate holding apparatus includes an elastic membrane that forms a plurality of pressure chambers for pressing a substrate, and a head body to which the elastic membrane is coupled. The elastic membrane includes a contact portion to be brought into contact with the substrate for pressing the substrate against a polishing pad, an edge circumferential wall extending upwardly from a peripheral edge of the contact portion, and a plurality of inner circumferential walls arranged radially inwardly of the edge circumferential wall and extending upwardly from the contact portion. At least two adjacent inner circumferential walls of the plurality of inner circumferential walls include slope circumferential walls inclined radially inwardly. The slope circumferential walls are inclined radially inwardly in their entirety from their lower ends to upper ends, and extend upwardly.
Abstract:
A polishing object is prevented from slipping out without depending on the process type or the polishing condition. A polishing apparatus for polishing a surface to be polished of an polishing object by sliding the surface to be polished and a polishing member relative to each other, including: a pressing unit that presses a back surface of the surface to be polished of the polishing object such that the surface to be polished is pressed against the polishing member; a retainer member that is arranged on an outer side of the pressing unit and presses the polishing member; a storage unit that stores information concerning a condition for preventing the polishing object from slipping out, the condition being defined by use of information concerning a pressing force of the retainer member; and a control unit that acquires information concerning a force of friction between the surface to be polished of the polishing object and the polishing member or information concerning the pressing force of the retainer member, and executes control for adapting to the condition for preventing the slipping-out by using the acquired information concerning the force of friction or the acquired information concerning the pressing force of the retainer member.
Abstract:
An elastic membrane to be used for a polishing head includes a contact portion configured to come into contact with a wafer, an annular side wall provided to stand on an outer peripheral end of the contact portion, a first partition wall linearly extending inward in a radial direction in sectional view from the side wall, and a second partition wall linearly extending inward and upward in the radial direction in sectional view from an outer peripheral end portion of the contact portion, wherein the first partition wall, the second partition wall, and the side wall constitute an edge pressure chamber for pressing an edge of the wafer.
Abstract:
An elastic membrane capable of precisely controlling a polishing profile in a narrow area of a wafer edge portion is disclosed. The elastic membrane includes a contact portion to be brought into contact with a substrate; a first edge circumferential wall extending upwardly from a peripheral edge of the contact portion; and a second edge circumferential wall having a horizontal portion connected to an inner circumferential surface of the first edge circumferential wall. The inner circumferential surface of the first edge circumferential wall includes an upper inner circumferential surface and a lower inner circumferential surface, both of which are perpendicular to the contact portion. The upper inner circumferential surface extends upwardly from the horizontal portion of the second edge circumferential wall, and the lower inner circumferential surface extends downwardly from the horizontal portion.