公开(公告)号：US20170114452A1

公开(公告)日：2017-04-27

申请号：US15399371

申请日：2017-01-05

Applicant: Entegris, Inc.

Inventor： David W. Peters

IPC: C23C16/18 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07F15/06 ,  C23C16/44 ,  C23C16/4485 ,  C23C16/45553

Abstract: Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400° C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.

公开(公告)号：US09540408B2

公开(公告)日：2017-01-10

申请号：US14430217

申请日：2013-09-24

Applicant: Entegris, Inc.

Inventor： David W. Peters

IPC: C23C16/18 ,  C07F15/06 ,  C23C16/448 ,  C23C16/455 ,  C23C16/44

CPC classification number: C23C16/18 ,  C07F15/06 ,  C23C16/44 ,  C23C16/4485 ,  C23C16/45553

Abstract: Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400° C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.

Abstract translation: 描述了甲基甲硅烷基酰胺和羰基钴前体，其可用于气相沉积工艺，例如化学气相沉积和原子层沉积，沉积钴并在低于400℃的温度下形成高纯度含钴膜。这些前体和 工艺可用于集成电路的制造和微处理器以及逻辑和存储器芯片等器件的生产。

公开(公告)号：US10329663B2

公开(公告)日：2019-06-25

申请号：US15399371

申请日：2017-01-05

Applicant: Entegris, Inc.

Inventor： David W. Peters

IPC: C23C16/18 ,  C23C16/448 ,  C23C16/455 ,  C07F15/06 ,  C23C16/44

Abstract: Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400° C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.

公开(公告)号：US09997362B2

公开(公告)日：2018-06-12

申请号：US15302741

申请日：2015-03-26

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Scott L. Battle ,  David W. Peters ,  Philip S. H. Chen

IPC: H01L21/44 ,  H01L21/285 ,  C07F15/06 ,  C23C16/18 ,  C23C16/56 ,  H01L21/768 ,  C23C16/06 ,  C23C16/455 ,  H01L21/321 ,  H01L23/532

CPC classification number: H01L21/28562 ,  C07F15/06 ,  C23C16/06 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and contacting the precursor vapor with a substrate under vapor deposition conditions effective for depositing on the substrate (i) high purity, low resistivity cobalt or (ii) cobalt that is annealable by thermal annealing to form high purity, low resistivity cobalt. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms an electrode, capping layer, encapsulating layer, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel display, or solar panel.

公开(公告)号：US20160343795A1

公开(公告)日：2016-11-24

申请号：US15161217

申请日：2016-05-21

Applicant: Entegris, Inc.

Inventor： Julie Cissell ,  Chongying Xu ,  Thomas M. Cameron ,  William Hunks ,  David W. Peters

IPC: H01L49/02 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L28/40 ,  C23C16/45525 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t-AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCl4; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4-x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N′-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

Abstract translation: 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; Ti（NMeEt）4; Ti（NEt2）4; TiCl4; tBuN = Nb（NEt2）3; tBuN = Nb（NMe2）3; t-BuN = Nb（NEtMe）3; t-AmN = Nb（NEt2）3; t-AmN = Nb（NEtMe）3; t-AmN = Nb（NMe2）3; t-AmN = Nb（OBu-t）3; Nb-13; Nb（NEt2）4; Nb（NEt2）5; Nb（N（CH 3）2）5; Nb（OC2H5）5; Nb（thd）（OPr-i）4; SiH（OMe）3; SiCl4; Si（NMe2）4; （Me 3 Si）2 NH GeRax（ORb）4-x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（Rb 3 Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。

公开(公告)号：US20150251920A1

公开(公告)日：2015-09-10

申请号：US14431116

申请日：2013-09-26

Applicant: ENTEGRIS, INC.

Inventor： Weimin Li ,  David W. Peters ,  Scott L. Battle ,  William Hunks

IPC: C01G41/00 ,  C07F11/00 ,  H01B1/02 ,  C09D5/24 ,  C23C16/16 ,  C01C3/11

CPC classification number: C01G41/006 ,  C01C3/11 ,  C07F11/00 ,  C07F11/005 ,  C09D5/24 ,  C23C16/16 ,  C23C16/18 ,  C23C16/4485 ,  H01B1/02

Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

Abstract translation: 用于在衬底上形成含钨材料的钨前体，例如在微电子器件的制造中。 钨前体没有氟含量，并且可以用于固体递送过程或其它气相沉积技术，以形成诸如用于集成电路金属化的元素钨，或氮化钨膜或其它钨化合物膜的膜，其可用作 用于随后的元素钨金属化的基础层。

公开(公告)号：US12084778B2

公开(公告)日：2024-09-10

申请号：US16898149

申请日：2020-06-10

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  B01D39/20 ,  B01D67/00 ,  C23C14/24 ,  C23C14/50 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C28/044 ,  B01D39/2027 ,  B01D67/00 ,  C23C14/243 ,  C23C14/50 ,  C23C16/042 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56 ,  C23C28/042 ,  B01D2239/0478 ,  B01D2239/1216

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US09637395B2

公开(公告)日：2017-05-02

申请号：US14431116

申请日：2013-09-26

Applicant: ENTEGRIS, INC.

Inventor： Weimin Li ,  David W. Peters ,  Scott L. Battle ,  William Hunks

IPC: C07F11/00 ,  C01G41/00 ,  C23C16/16 ,  C23C16/18 ,  C23C16/448 ,  C01C3/11 ,  C09D5/24 ,  H01B1/02

CPC classification number: C01G41/006 ,  C01C3/11 ,  C07F11/00 ,  C07F11/005 ,  C09D5/24 ,  C23C16/16 ,  C23C16/18 ,  C23C16/4485 ,  H01B1/02

Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

公开(公告)号：US12018382B2

公开(公告)日：2024-06-25

申请号：US16123149

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C16/44 ,  B01D39/20 ,  B01D67/00 ,  C23C14/24 ,  C23C14/50 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  C23C28/04

CPC classification number: C23C28/044 ,  B01D39/2027 ,  B01D67/00 ,  C23C14/243 ,  C23C14/50 ,  C23C16/042 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56 ,  C23C28/042 ,  B01D2239/0478 ,  B01D2239/1216

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US20200378011A1

公开(公告)日：2020-12-03

申请号：US16898149

申请日：2020-06-10

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04 ,  C23C14/24 ,  C23C14/50 ,  C23C16/40

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.