公开(公告)号：US08859965B2

公开(公告)日：2014-10-14

申请号：US14022401

申请日：2013-09-10

Applicant: Elpida Memory, Inc.

Inventor： Kazuhiro Nojima

IPC: H01J37/295 ,  G01N23/20 ,  G01N23/205

CPC classification number: G01N23/20058 ,  G01N23/2055 ,  H01J37/2955 ,  H01J2237/2802

Abstract: A crystal material lattice strain evaluation method includes illuminating a sample having a crystal structure with an electron beam in a zone axis direction, and selectively detecting a certain diffracted wave diffracted in a certain direction among a plurality of diffracted waves diffracted by the sample. The method further includes repeating the illuminating step and the selectively detecting step while scanning the sample, and obtaining a strain distribution image in a direction corresponding to the certain diffracted wave from diffraction intensity at each point of the sample.

Abstract translation: 晶体晶格应变评估方法包括在区域轴线方向上照射具有电子束的晶体结构的样品，并且选择性地检测在被样品衍射的多个衍射波中的某个方向上衍射的某个衍射波。 该方法还包括在扫描样品时重复照明步骤和选择性检测步骤，并且从样品的每个点的衍射强度获得与特定衍射波相对应的方向的应变分布图像。