公开(公告)号：US12075701B2

公开(公告)日：2024-08-27

申请号：US17516228

申请日：2021-11-01

Applicant: Epir, Inc.

Inventor： Sushant Sonde ,  Yong Chang ,  Silviu Velicu ,  Srinivasan Krishnamurthy

IPC: H10N15/10

CPC classification number: H10N15/15

Abstract: A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm−3 at 300K.

公开(公告)号：US20220231214A1

公开(公告)日：2022-07-21

申请号：US17516228

申请日：2021-11-01

Applicant: Epir, Inc.

Inventor： Sushant Sonde ,  Yong Chang ,  Silviu Velicu ,  Srinivasan Krishnamurthy

IPC: H01L37/02

Abstract: A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm−3 at 300K.