公开(公告)号：US20250133794A1

公开(公告)日：2025-04-24

申请号：US19005092

申请日：2024-12-30

Applicant: FLOSFIA INC

Inventor： Yusuke MATSUBARA ,  Mitsuru Okigawa ,  Hiroyuki Ando ,  Takashi Shinohe

IPC: H10D62/60 ,  H01L21/425 ,  H10D8/60 ,  H10D62/10 ,  H10D62/40 ,  H10D62/80

Abstract: Provided a semiconductor device including: a semiconductor layer; and an electrode disposed on the semiconductor layer directly or via another layer, the semiconductor layer including a first region containing, as a major component, a crystalline oxide semiconductor containing gallium, and a second region containing, as a major component, an oxide containing gallium, the second region and the first region each containing an impurity element, a maximum value of a concentration of the impurity element in the second region being located at a depth of 1.0 μm or more from an upper surface of the semiconductor layer and being greater than a maximum value of a concentration of the impurity element in the first region.