公开(公告)号：US09922894B1

公开(公告)日：2018-03-20

申请号：US15269629

申请日：2016-09-19

Applicant: FREESCALE SEMICONDUCTOR INC.

Inventor： Lakshminarayan Viswanathan ,  Jaynal A. Molla ,  David Abdo ,  Mali Mahalingam ,  Carl D'Acosta

IPC: H01L23/12 ,  H01L23/66 ,  H01L23/20 ,  H01L23/047 ,  H01L21/48 ,  H01L23/057 ,  H01L23/367 ,  B22F3/10 ,  B22F1/00 ,  B23K35/02 ,  B23K35/30 ,  H01L23/00

CPC classification number: H01L23/20 ,  B22F1/0062 ,  B22F3/10 ,  B22F5/10 ,  B22F7/02 ,  B22F2301/10 ,  B22F2301/255 ,  B22F2302/45 ,  B23K35/025 ,  B23K35/30 ,  H01L21/4817 ,  H01L21/50 ,  H01L23/04 ,  H01L23/047 ,  H01L23/057 ,  H01L23/10 ,  H01L23/3675 ,  H01L24/32 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48177 ,  H01L2224/73265 ,  H01L2924/01042 ,  H01L2924/15747 ,  H01L2924/3511

Abstract: Air cavity packages and methods for producing air cavity packages containing sintered bonded components, multipart window frames, and/or other unique structural features are disclosed. In one embodiment, a method for fabricating an air cavity package includes the step or process of forming a first metal particle-containing precursor layer between a base flange and a window frame positioned over the base flange. A second metal particle-containing precursor layer is further formed between the base flange and a microelectronic device positioned over the base flange. The metal particle-containing precursor layers are sintered substantially concurrently at a maximum processing temperature less than melt point(s) of metal particles within the layers to produce a first sintered bond layer from the first precursor layer joining the window frame to the base flange and to produce a second sintered bond layer from the second precursor layer joining the microelectronic device to the base flange.