公开(公告)号：US20200040119A1

公开(公告)日：2020-02-06

申请号：US16177773

申请日：2018-11-01

Applicant: Fudan University

Inventor： Hai DENG ,  Chenxu WANG ,  Zhilong LI ,  Xuemiao LI

IPC: C08F293/00 ,  C08F212/14 ,  C08F220/18 ,  C08F230/08

Abstract: The present invention discloses a block copolymer comprising at least a block A and a block B, wherein the monomer of block A contains one or more of the structural units: a C3-C6 alkenyl group containing a substituent or a C3-C6 alkenyl group; wherein the number of R1 is 0, 1, 2, 3, 4 or 5; R2 is selected from the group consisting of: absent, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C1-C6 alkoxyl, hydroxyl, halogen; “substituted” means a group is substituted by one or more substituents selected from halogen and hydroxyl; block B is obtained by polymerization of the monomer R6 is selected from F or a group containing F, and the number of R6 is 0, 1, 2, 3, 4 or 5. The block copolymer can assemble rapidly at a low temperature with self-repairing performance to reduce the defect rate.

公开(公告)号：US20180208697A1

公开(公告)日：2018-07-26

申请号：US15614211

申请日：2017-06-05

Applicant: FUDAN UNIVERSITY

Inventor： Hai DENG ,  Xuemiao LI ,  Jie LI

IPC: C08F293/00 ,  C07C69/653

CPC classification number: C08F293/00 ,  C07C69/653 ,  C08F297/026

Abstract: The present invention relates to a rapid assembled small-sized block polymer material with low quenching temperature and the preparation and application thereof. In particular, the present invention discloses a block copolymer, and glass transition temperature of the block copolymer is less than 120° C. The present invention also discloses the preparation and application of the block copolymer. The block copolymer can achieve excellent phase separation and rapid patterning at a lower annealing temperature (e.g. 80° C.) and a shorter annealing time (e.g. 30 s), and a photolithographic pattern with a very high resolution (e.g. 5 nm half-pitch) can be further obtained by etching, which provides a new photolithographic mean for further extension of Moore's Law to achieve semiconductor photolithography with a resolution of less than 10 nm, or even 5 nm (half-pitch).