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公开(公告)号：US20220093843A1
公开(公告)日：2022-03-24
申请号：US17539343
申请日：2021-12-01
Applicant: FUJIFILM Corporation
Inventor： Kenichi UMEDA , Takamichi FUJII , Yukihiro OKUNO
IPC: H01L41/08 , H01L41/187
Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including, as a main component, a perovskite-type oxide containing lead and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1-dOe, where M is composed of one or more metal elements capable of substituting in the perovskite-type oxide, 0
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2.发明申请公开(公告)号：US20180233684A1
公开(公告)日：2018-08-16
申请号：US15953015
申请日：2018-04-13
Applicant: FUJIFILM Corporation
Inventor： Kenichi UMEDA
CPC classification number: H01L51/105 , H01L21/28 , H01L21/288 , H01L29/417 , H01L29/786 , H01L51/0022 , H01L51/0074 , H01L51/0078 , H01L51/0545 , H01L51/0558
Abstract: An object of the present invention is to provide an electrode material for an organic semiconductor device with which an excellent electrode pattern can be formed, a method for forming an electrode pattern, and an organic thin-film transistor.An electrode material for an organic semiconductor device of the present invention includes inorganic nanoparticles, an organic π-conjugated ligand, water, 0.0005% to 15% by mass of a fluorine-based surfactant, and a surface tension adjuster of which a dielectric constant is 20 to 30, in which the organic π-conjugated ligand is a ligand having at least one hydrophilic substituent.
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公开(公告)号：US20170358765A1
公开(公告)日：2017-12-14
申请号：US15673756
申请日：2017-08-10
Applicant: FUJIFILM Corporation
Inventor： Kenichi UMEDA , Keisuke USHIROGATA
CPC classification number: H01L51/105 , C07D487/22 , H01L21/28 , H01L21/288 , H01L29/417 , H01L29/786 , H01L51/0078 , H01L51/0091 , H01L2251/301
Abstract: An object of the present invention is to provide an electrode material for an organic semiconductor device which maintains excellent conductivity and of which contact properties with an organic semiconductor becomes favorable. The electrode material for an organic semiconductor device of the present invention contains inorganic nanoparticles and an organic π-conjugated ligand, in which the organic π-conjugated ligand is a ligand having at least one electron-withdrawing substituent.
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公开(公告)号：US20230165149A1
公开(公告)日：2023-05-25
申请号：US18159139
申请日：2023-01-25
Applicant: FUJIFILM Corporation
Inventor： Kenichi UMEDA
IPC: H10N30/00 , H10N30/853
CPC classification number: H10N30/10516 , H10N30/8548
Abstract: There are provided a piezoelectric film-attached substrate and piezoelectric element, which include, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide containing lead as a main component of an A site, and a buffer layer, where the buffer layer contains a metal oxide represented by MdN1-dOe. Here, M consists of one or more metal elements substitutable for the A site of the perovskite-type oxide and has an electronegativity of less than 0.95. In a case of 0
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公开(公告)号：US20220093844A1
公开(公告)日：2022-03-24
申请号：US17539422
申请日：2021-12-01
Applicant: FUJIFILM Corporation
Inventor： Kenichi UMEDA , Yukihiro OKUNO , Takami ARAKAWA
IPC: H01L41/08 , H01L41/319
Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1−dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1αa2)(Zrb1Tib2βb3)Oc, where 0.5
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Patent Agency Ranking
公开(公告)号：US20200348451A1
公开(公告)日：2020-11-05
申请号：US16929100
申请日：2020-07-14
Applicant: FUJIFILM CORPORATION
Inventor： Kenichi UMEDA , Seigo NAKAMURA , Tatsuya YOSHIHIRO , Yuichiro ITAI
Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.
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公开(公告)号：US20200209436A1
公开(公告)日：2020-07-02
申请号：US16813703
申请日：2020-03-09
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Tatsuya YOSHIHIRO , Kenichi UMEDA , Yuichiro ITAI
Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.
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公开(公告)号：US20230255116A1
公开(公告)日：2023-08-10
申请号：US18191518
申请日：2023-03-28
Applicant: FUJIFILM Corporation
Inventor： Hiroyuki KOBAYASHI , Kenichi UMEDA
IPC: H01L41/00
CPC classification number: H10N30/8554 , H10N30/877 , H10N30/1051
Abstract: A piezoelectric laminate and a piezoelectric element, including on a substrate in the following order, a lower electrode layer, and a piezoelectric film, in which a region of the lower electrode layer, the region being in contact with the piezoelectric film, is constituted of a metal layer, where a (111) plane of the metal layer has an inclination of 1° or more with respect to a surface of the substrate, and the piezoelectric film contains a perovskite-type oxide containing Pb.
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9.发明申请公开(公告)号：US20200002804A1
公开(公告)日：2020-01-02
申请号：US16568905
申请日：2019-09-12
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Kenichi UMEDA , Yuichiro ITAI , Shinichiro SONODA
Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.
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10.发明申请公开(公告)号：US20140103341A1
公开(公告)日：2014-04-17
申请号：US14104714
申请日：2013-12-12
Applicant: FUJIFILM CORPORATION
Inventor： Kenichi UMEDA , Atsushi TANAKA , Masayuki SUZUKI , Tatsuya SHIMODA
IPC: H01L21/02 , H01L21/66 , H01L29/786
CPC classification number: H01L21/02565 , H01L21/02554 , H01L21/02592 , H01L21/02628 , H01L22/10 , H01L27/14687 , H01L27/14698 , H01L29/78693 , H01L2924/0002 , H01L2924/00
Abstract: A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm−1 to 1520 cm−1 in an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm−1 to 1450 cm−1 and an infrared wave number range of from more than 1450 cm−1 to 1520 cm−1, a peak positioned within the infrared wave number range of from 1380 cm−1 to 1450 cm−1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm−1 to 1750 cm−1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.
Abstract translation: 无定形氧化物薄膜的制造方法包括：在含有有机成分的第一氧化物前体膜中，在低于有机成分的热解温度的温度下选择性地改变有机成分的结合状态的预处理工序 和In，以获得第二氧化物前体膜，其中当通过利用傅立叶变换红外光谱进行测量而获得的红外吸收光谱中的1380cm -1至1520cm -1的红外波数范围被分为红外 波数范围为1380cm -1至1450cm -1，红外波数范围为1450cm -1以上1520cm -1以上，红外波数范围为1380cm -1〜 1450cm -1表现出红外吸收光谱的最大值，红外波数范围为1350cm-1至1750cm -1; 以及去除残留在第二氧化物前体膜中的有机成分的后处理工艺，将第二氧化物前体膜转变为含有In的无定形氧化物薄膜。
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