MEMORY PHYSICAL LAYER INTERFACE, MEMORY APPARATUS AND METHOD THEREOF

    公开(公告)号:US20250157515A1

    公开(公告)日:2025-05-15

    申请号:US18509318

    申请日:2023-11-15

    Abstract: A memory apparatus includes a DFE receiver and a DFE reset circuit. The DFE receiver is configured to receive a data signal and a data strobe signal from a memory device. The DFE receiver includes a DFE tap that is determined according to a previous data signal, and the DFE receiver adjusts the data signal according to the DFE tap. The DFE reset circuit is configured to receive a gate enable signal and an internal enable signal from the memory controller, generate a DFE reset signal according to the gate enable signal and the internal enable signal. The DFE reset circuit outputs the DFE reset signal to the DFE receiver to reset the DFE tap of the DFE receiver between read bursts.

    VOLTAGE REGULATOR TO PREVENT VOLTAGE DROP IN REGULATED VOLTAGE FOR DOUBLE DATA READ PHYSICAL INTERFACE

    公开(公告)号:US20240192714A1

    公开(公告)日:2024-06-13

    申请号:US18079837

    申请日:2022-12-12

    CPC classification number: G05F1/565 G05F1/575

    Abstract: A voltage regulator provides a regulated voltage to a double data rate (DDR) Physical Interface (PHY) including a plurality of delay elements. The voltage regulator includes: an amplifier, for receiving a voltage at a first input terminal and generating an output voltage; a first MOSFET coupled to a supply voltage and a second input terminal of the amplifier; a second MOSFET coupled in parallel with the first MOSFET for generating a first current in response to a first enable signal; a load, coupled to the first MOSFET and the second MOSFET, for generating the regulated voltage; and a load capacitor, coupled in parallel with the load. The first enable signal is generated by inputting a gate enable signal for a delay element of the plurality of delay elements into a delay circuit corresponding to the delay element.

    Duty-cycle correction circuit for DDR devices

    公开(公告)号:US11005468B1

    公开(公告)日:2021-05-11

    申请号:US17016333

    申请日:2020-09-09

    Abstract: A method for performing duty-cycle correction of an output clock in a Double Data Rate (DDR) system includes: setting a fixed delay of a rising-edge of the output clock as a parameter X which is equal to a digital Master Delay Locked Loop (MDLL) code of the DDR system multiplied by a percentage representing an estimated distortion of the duty-cycle of the output clock from a desired duty-cycle; shifting the rising-edge of the output clock by the fixed delay; and determining whether a duty cycle of the shifted output clock meets the desired duty-cycle. When a duty-cycle of the shifted output clock meets the desired duty-cycle, the fixed rising-edge delay is taken as a final delay code for the output clock; otherwise, a falling-edge of the output clock is shifted by an amount in a range between 0 and NX, wherein N is an integer.

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