公开(公告)号：US20160276231A1

公开(公告)日：2016-09-22

申请号：US14799171

申请日：2015-07-14

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： LIANJUN LIU ,  PHILIPPE LANCE ,  DAVID J. MONK ,  BABAK A. TAHERI

IPC: H01L21/66 ,  G01R1/073 ,  G01R31/28

CPC classification number: H01L22/30 ,  G01R1/07342 ,  G01R31/2884 ,  G01R31/2891 ,  G01R31/3025 ,  H01L22/10

Abstract: A system for programming integrated circuit (IC) dies formed on a wafer includes an optical transmitter that outputs a digital test program as an optical signal. At least one optical sensor (e.g., photodiode) is formed with the IC dies on the wafer. The optical sensor detects and receives the optical signal. A processor formed on the wafer converts the optical signal to the digital test program and the digital test program is stored in memory on the wafer in association with one of the IC dies. The optical transmitter does not physically contact the dies, but can flood an entire surface of the wafer with the optical signal so that all of the IC dies are concurrently programmed with the digital test program.

Abstract translation: 用于在晶片上形成的用于编程集成电路（IC）裸片的系统包括：输出数字测试程序作为光信号的光发送器。 形成至少一个光学传感器（例如，光电二极管），其中IC在晶片上死亡。 光学传感器检测并接收光信号。 形成在晶片上的处理器将光信号转换为数字测试程序，数字测试程序与IC芯片之一相关联地存储在晶片上的存储器中。 光发射机不物理地接触模具，而是可以用光信号淹没晶片的整个表面，使得所有的IC芯片同时被数字测试程序编程。

公开(公告)号：US20150291414A1

公开(公告)日：2015-10-15

申请号：US14688546

申请日：2015-04-16

Applicant: Freescale Semiconductor, Inc.

Inventor： LIANJUN LIU

IPC: B81B3/00

CPC classification number: B81B3/0021 ,  B81B2207/096 ,  B81C1/00134 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2203/00

Abstract: A MEMS device includes a first substrate structure and a second substrate structure. The first substrate structure has a conductive microstructure and an oxide material surrounding lateral side of the conductive microstructure. A thickness of the conductive microstructure and a thickness of the oxide material are approximately equivalent. The second substrate structure has an active region of the MEMS device, and the second substrate structure is coupled in spaced apart relationship with the first substrate structure to produce a cavity between the structures. The active region of the MEMS device is suspended above the cavity and the conductive microstructure underlies the cavity. The conductive microstructure is formed from a polysilicon structure layer and a local oxidation of silicon process is implemented to thermally grow the oxide material using the polysilicon of the structural layer. The second substrate structure may be coupled to the first substrate structure by fusion bonding.

Abstract translation: MEMS器件包括第一衬底结构和第二衬底结构。 第一衬底结构具有导电微结构和围绕导电微结构的侧面的氧化物材料。 导电微结构的厚度和氧化物材料的厚度大致相等。 第二衬底结构具有MEMS器件的有源区，并且第二衬底结构以与第一衬底结构间隔开的关系耦合以在结构之间产生腔。 MEMS器件的有源区域悬挂在空腔上方，导电微结构位于空腔的下面。 导电微结构由多晶硅结构层形成，并且实施硅工艺的局部氧化以使用结构层的多晶硅热生长氧化物材料。 第二衬底结构可以通过熔融结合耦合到第一衬底结构。

公开(公告)号：US20160306007A1

公开(公告)日：2016-10-20

申请号：US14850432

申请日：2015-09-10

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： LIANJUN LIU ,  PHILIPPE BERNARD ROLAND LANCE ,  DAVID JOSEPH MONK ,  BABAK A. TAHERI

IPC: G01R31/28 ,  G01R29/12 ,  G01R1/073

CPC classification number: G01R31/2884 ,  G01R31/3025 ,  G01R31/318511

Abstract: An electric field sensor includes sense and reference cells. The sense cell produces a resistance that varies relative to an intensity of an electric field, and the reference cell produces a resistance that is invariable relative to the intensity of the electric field. An output signal indicative of the intensity of the electric field is determined using the difference between the resistances. A system includes an electric field source that outputs a digital test program as an electric field signal. The system further includes the electric field sensor formed with IC dies on a wafer. The electric field sensor receives the electric field signal. The received electric field signal is converted to the test program, and the test program is stored in memory on the wafer. The electric field source does not physically contact the dies, but can flood an entire surface of the wafer with the electric field signal.

Abstract translation: 电场传感器包括有源和参考单元。 感测单元产生相对于电场强度变化的电阻，并且参考单元产生相对于电场强度不变的电阻。 使用电阻之间的差来确定表示电场强度的输出信号。 系统包括输出作为电场信号的数字测试程序的电场源。 该系统还包括在晶片上形成有IC管芯的电场传感器。 电场传感器接收电场信号。 接收的电场信号被转换为测试程序，测试程序存储在晶片上的存储器中。 电场源不与裸片物理接触，而是可以用电场信号来淹没晶片的整个表面。

公开(公告)号：US20180122698A1

公开(公告)日：2018-05-03

申请号：US15335875

申请日：2016-10-27

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： QING ZHANG ,  LIANJUN LIU

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/76898 ,  H01L21/76828 ,  H01L21/7684 ,  H01L21/76844 ,  H01L21/76879 ,  H01L23/481 ,  H01L23/53228 ,  H01L23/5329

Abstract: A through substrate via (TSV) and method of forming the same are provided. The method of making the TSV may include etching a via opening into the backside of semiconductor substrate, the via opening exposing a surface of a metal landing structure. A conductive layer is deposited over the backside of semiconductor substrate, sidewalls of the via opening, and exposed surface of the metal landing structure. The conductive layer is coated with a polymer material, filling the via opening. The polymer material is developed to remove the polymer material from the backside of semiconductor substrate, leaving the via opening filled with undeveloped polymer material. A planar backside surface of semiconductor substrate is formed by removing the conductive layer.

公开(公告)号：US20170081174A1

公开(公告)日：2017-03-23

申请号：US14861886

申请日：2015-09-22

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： LIANJUN LIU ,  DAVID J. MONK

IPC: B81B7/00 ,  H01L43/02 ,  H01L43/12 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/025 ,  B81C1/00301 ,  B81C1/00817 ,  G01L9/0042 ,  G01L9/0073 ,  H01L43/02 ,  H01L43/12

Abstract: In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.

公开(公告)号：US20160274188A1

公开(公告)日：2016-09-22

申请号：US14754075

申请日：2015-06-29

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： LIANJUN LIU ,  PHILIPPE LANCE ,  DAVID J. MONK

IPC: G01R31/317 ,  G01R31/28

CPC classification number: G01R31/318511 ,  G01R31/2831 ,  G01R31/315 ,  G01R31/31917

Abstract: A system for programming magnetic field sensors formed on a wafer includes a magnetic field transmitter that outputs a digital test program as a magnetic signal. At least one digital magnetic sensor (e.g., magnetoresistive sensor) is formed with the magnetic field sensors on the wafer and is distinct from the magnetic field sensors. The digital magnetic sensor detects and receives the magnetic signal. A processor formed on the wafer converts the magnetic signal to the digital test program and the digital test program is stored in memory on the wafer in association with one of the magnetic field sensors. The magnetic field transmitter does not physically contact the wafer, but can flood an entire surface of the wafer with the magnetic signal so that all of the magnetic field sensors are concurrently programmed with the digital test program.

Abstract translation: 用于对形成在晶片上的磁场传感器进行编程的系统包括输出数字测试程序作为磁信号的磁场发射器。 至少一个数字磁传感器（例如，磁阻传感器）与晶片上的磁场传感器形成并且不同于磁场传感器。 数字磁传感器检测并接收磁信号。 形成在晶片上的处理器将磁信号转换为数字测试程序，数字测试程序与磁场传感器之一相关联地存储在晶片上的存储器中。 磁场发射器不物理地接触晶片，而是可以用磁信号淹没晶片的整个表面，使得所有的磁场传感器都与数字测试程序同时编程。