公开(公告)号：US3786294A

公开(公告)日：1974-01-15

申请号：US3786294D

申请日：1971-02-22

Applicant: GEN ELECTRIC

Inventor： WILSON R ,  ROSCZAK J ,  BLUMENFELD S ,  REDINGTON R

IPC: H01J29/45 ,  H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L27/00 ,  H01J31/28

CPC classification number: H01L28/20 ,  H01J29/455 ,  H01L21/00 ,  H01L21/316 ,  H01L27/00

Abstract: An improved coating for diode array targets is disclosed wherein a resistive sea is coated over the diode array. The resistive sea has a thickness of from 10 to 1000A and a resistivity of from 5 X 105 to 109 ohm-centimeters. The resistive sea comprises an electronically conductive borate glass containing an oxide of a metal, e.g. iron, vanadium, cobalt, etc. This layer has been found to serve a protective function and, in particular, serves to prevent an increase in the dark current of the array due to ''''aging'''' effects or due to vacuum baking of the array in preparation for use as an image intensifier.

Abstract translation: 公开了一种用于二极管阵列靶的改进的涂层，其中电阻性海被涂覆在二极管阵列上。 电阻海的厚度为10至1000A，电阻率为5×105至109欧姆厘米。 电阻性海包括含有金属氧化物的电子导电硼酸盐玻璃， 铁，钒，钴等。已经发现该层具有保护功能，特别是用于防止由于“老化”效应引起的阵列的暗电流的增加或者由于阵列的真空烘烤 准备用作图像增强器。

公开(公告)号：US3763476A

公开(公告)日：1973-10-02

申请号：US3763476D

申请日：1972-03-15

Applicant: GEN ELECTRIC

Inventor： WILSON R ,  POSSIN G ,  ELLIS G

IPC: H01J29/39 ,  G11C11/23 ,  G11C13/04 ,  H01J31/28 ,  G11C5/02 ,  G11C11/34

CPC classification number: G11C11/23 ,  G11C13/048 ,  H01J31/283 ,  Y10S148/026 ,  Y10S148/05

Abstract: A diode storage array, including a diode array on one face of a semiconductor wafer, an insulating layer overlying the opposite face of said wafer and a conductive layer overlying the insulating layer, is written upon by irradiating the conductive layer side of said wafer to induce charge storage in the insulating layer. The radiation may be high energy photons, a scanned electron beam or electrons from a photo-emitter. Readout is accomplished by irradiating the target with lower energy radiation to form electron-hole pairs in the wafer. The holes are selectively driven to the diode side of the wafer under the control of the stored charge where selected, reverse biased, diodes are discharged. Subsequent scanning of the diode array by an electron beam produces a variable output signal, indicative of the information stored. Since the charge on the insulating layer is not dissipated, the information can be read as often as desired.

Abstract translation: 通过照射所述晶片的导电层侧来写入二极管存储阵列，其包括半导体晶片的一个面上的二极管阵列，覆盖所述晶片的相对面的绝缘层和覆盖绝缘层的导电层，以诱导 电荷存储在绝缘层中。 辐射可以是高能量光子，扫描的电子束或来自光发射器的电子。 通过用较低的能量辐射照射目标以在晶片中形成电子 - 空穴对来实现读出。 在存储的电荷的控制下，孔被选择性地驱动到晶片的二极管侧，其中所选择的反向偏置的二极管被放电。 随后通过电子束扫描二极管阵列产生指示存储的信息的可变输出信号。 由于绝缘层上的电荷不会消散，所以可以根据需要频繁地读取信息。

公开(公告)号：US3761895A

公开(公告)日：1973-09-25

申请号：US3761895D

申请日：1971-03-17

Applicant: GEN ELECTRIC

Inventor： ELLIS G ,  POSSIN G ,  WILSON R

IPC: G11C11/23 ,  H01J29/39 ,  H01J31/60 ,  H01L29/00 ,  G11C5/02 ,  G11C11/34 ,  G11C13/04

CPC classification number: H01J31/60 ,  G11C11/23 ,  H01J29/39 ,  H01L29/00

Abstract: An electron beam addressable memory is disclosed in which information is stored as an electric charge in a multilayered memory target. The multilayered memory comprises a conductive layer, an insulating layer having a plurality of charge storage sites, a layer of n-type and a layer of p-type semiconductor material having a p-n junction therebetween. The method of writing causes charge to be stored at selected sites in the insulating layer. The method of reading causes the current through the p-n junction, which is reverse biased, to vary in magnitude depending upon whether or not the beam impinges on a charged site. The read and write electron beams are preferably of the same energy and a different voltage is applied to the conductive layer during reading than is applied during writing. In another embodiment, the conducting layer is omitted and the effect of different voltages applied to the conducting layer is produced by secondary emission from the insulating layer.

Abstract translation: 公开了一种电子束可寻址存储器，其中信息作为电荷存储在多层存储器目标中。 多层存储器包括导电层，具有多个电荷存储位置的绝缘层，n型层和p型半导体材料层之间具有p-n结。 写入方法使电荷存储在绝缘层中的选定位置。 读取方法导致通过反向偏置的p-n结的电流在取决于束是否照射在带电部位上的幅度上变化。 读和写电子束优选地具有相同的能量，并且在读取期间在写入期间施加不同的电压到导电层。 在另一个实施例中，省略导电层，并且通过来自绝缘层的二次发射产生施加到导电层的不同电压的效果。