公开(公告)号：US20140131831A1

公开(公告)日：2014-05-15

申请号：US13674311

申请日：2012-11-12

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Andy C. Wei ,  Konstantin Korablev ,  Francis Tambwe

IPC: H01L27/08 ,  H01L21/77

CPC classification number: H01L21/77 ,  H01L21/823431 ,  H01L27/0629 ,  H01L27/0886

Abstract: A method is provided for forming an integrated circuit having a diode. The method includes forming at least one fin in a shallow trench isolation (STI) oxide layer disposed above a substrate layer. The at least one fin extends from a bottom end adjacent the substrate layer to a top end. The method further includes adding a cathode implant in a first region of the at least one fin and the substrate layer and adding an anode implant in a second region of the at least one fin and the substrate layer such that a junction is formed in the substrate layer below the at least one fin. The method also includes etching away a portion of the STI oxide layer to expose the top end of the at least one fin.

Abstract translation: 提供一种用于形成具有二极管的集成电路的方法。 该方法包括在设置在基底层上方的浅沟槽隔离（STI）氧化物层中形成至少一个翅片。 至少一个翅片从邻近基底层的底端延伸到顶端。 该方法还包括在至少一个鳍片和衬底层的第一区域中添加阴极植入物，并且在至少一个翅片和衬底层的第二区域中添加阳极植入物，使得在衬底中形成结 在至少一个翅片下方的层。 该方法还包括蚀刻掉STI氧化物层的一部分以露出至少一个翅片的顶端。