公开(公告)号：US10236218B1

公开(公告)日：2019-03-19

申请号：US15900264

申请日：2018-02-20

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Ruilong Xie ,  Julien Frougier ,  Hiroaki Niimi ,  Nigel Cave ,  Xusheng Kevin Wu

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3213

Abstract: At least one method, apparatus and system disclosed herein involves forming semiconductor devices comprising dual silicides in contacts to FinFETs. The semiconductor device may comprise a PFET fin; an NFET fin; a first metal silicide around the NFET fin; a second metal silicide around the PFET fin; and a fill metal around the second metal silicide, above the PFET fin, and above the NFET fin. Methods of forming such devices are also disclosed.