公开(公告)号：US08739077B1

公开(公告)日：2014-05-27

申请号：US13782826

申请日：2013-03-01

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Piyush Pathak ,  Piyush Verma ,  Sarah N. McGowan

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

Abstract: Methods for modifying a physical design of an electrical circuit used in the manufacture of a semiconductor device, and methods for fabricating an integrated circuit, are provided. In an embodiment, a method includes providing a circuit design layout that has a plurality of element patterns. A first library of problematic sections is provided. An initial circuit section and an additional circuit section within the circuit design layout are determined to match problematic sections in the first library, and the initial and additional circuit sections have overlapping peripheral boundaries. A second library of replacement sections is provided. The replacement sections correspond to the problematic sections. The circuit sections that match the problematic sections are replaced with a replacement section that corresponds to the respective problematic sections to form the final circuit layout. Boundary characteristics of the replacement sections are substantially the same as the circuit sections replaced thereby.

Abstract translation: 提供了用于修改用于制造半导体器件的电路的物理设计的方法以及用于制造集成电路的方法。 在一个实施例中，一种方法包括提供具有多个元件图案的电路设计布局。 提供了第一个有问题的图书馆。 确定电路设计布局内的初始电路部分和附加电路部分以匹配第一库中的有问题的部分，并且初始和附加电路部分具有重叠的外围边界。 提供了第二个更换部分库。 更换部分对应于有问题的部分。 与有问题的部分匹配的电路部分将替换为与各个有问题的部分对应的替换部分，以形成最终的电路布局。 更换部分的边界特性与由此更换的电路部分基本相同。

公开(公告)号：US09064078B2

公开(公告)日：2015-06-23

申请号：US13953875

申请日：2013-07-30

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Piyush Verma ,  Todd P. Lukanc

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G03F1/36 ,  G06F17/5081

Abstract: A method of designing an optical photomask includes providing a target pattern, correcting the target pattern with an OPC model, adjusting the target pattern and/or the OPC model, and correcting a first corrected pattern. The target pattern indicates a target shape of a pre-pattern opening in a photoresist layer on a semiconductor substrate. Correcting the target pattern includes using an optical proximity correction (OPC) model to generate OPC output information that includes edge placement error (EPE) information, a first corrected pattern, and/or a simulated contour of the pre-pattern opening. Adjusting the target pattern and/or the OPC model includes adjusting with OPC based adjustments that are based on the OPC output information. Correcting the first corrected pattern includes using the OPC model in response to the OPC based adjustments to generate a second corrected pattern.

Abstract translation: 设计光学光掩模的方法包括提供目标图案，用OPC模型校正目标图案，调整目标图案和/或OPC模型，以及校正第一校正图案。 目标图案表示半导体基板上的光致抗蚀剂层中的预图案开口的目标形状。 校正目标图案包括使用光学邻近校正（OPC）模型来产生包括预图案打开的边缘放置误差（EPE）信息，第一校正图案和/或模拟轮廓的OPC输出信息。 调整目标模式和/或OPC模型包括使用基于OPC输出信息的基于OPC的调整进行调整。 校正第一校正模式包括响应于基于OPC的调整来使用OPC模型以生成第二校正模式。