公开(公告)号：US11380615B2

公开(公告)日：2022-07-05

申请号：US17118876

申请日：2020-12-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. Stamper ,  Daisy A. Vaughn ,  Stephen R. Bosley ,  Zhong-Xiang He

IPC: H01L23/522 ,  H01L27/08 ,  H01L49/02 ,  H01G4/33 ,  H01G4/08 ,  H01G4/232 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.

公开(公告)号：US10910304B2

公开(公告)日：2021-02-02

申请号：US16256595

申请日：2019-01-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. Stamper ,  Daisy A. Vaughn ,  Stephen R. Bosley ,  Zhong-Xiang He

IPC: H01L23/522 ,  H01L27/08 ,  H01L49/02 ,  H01G4/33 ,  H01G4/08 ,  H01G4/232 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.