公开(公告)号：US20180342454A1

公开(公告)日：2018-11-29

申请号：US15602801

申请日：2017-05-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan Zhang ,  Dongfei Pei ,  Frank W. Mont

IPC: H01L23/528 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/288 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53242

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to via and skip via structures and methods of manufacture. The method includes: forming a plurality of openings in a hardmask material; blocking at least one of the plurality of openings of the hardmask material with a blocking material; etching a skip via to a metallization feature in a stack of metallization features through another of the plurality of openings which is not blocked by the blocking material; and at least partially filling the skip via by a bottom up fill process.

公开(公告)号：US10157833B1

公开(公告)日：2018-12-18

申请号：US15602801

申请日：2017-05-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan Zhang ,  Dongfei Pei ,  Frank W. Mont

IPC: H01L29/40 ,  H01L23/528 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/288 ,  H01L23/532 ,  H01L23/522

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to via and skip via structures and methods of manufacture. The method includes: forming a plurality of openings in a hardmask material; blocking at least one of the plurality of openings of the hardmask material with a blocking material; etching a skip via to a metallization feature in a stack of metallization features through another of the plurality of openings which is not blocked by the blocking material; and at least partially filling the skip via by a bottom up fill process.