公开(公告)号：US10790198B2

公开(公告)日：2020-09-29

申请号：US16058494

申请日：2018-08-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Fuad H. Al-Amoody ,  Yiheng Xu ,  Rishikesh Krishnan

IPC: H01L29/06 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to fin structures and methods of manufacture. The structure includes: a plurality of fin structures formed of substrate material; a semiconductor material located between selected fin structures of the plurality of fin structures; and isolation regions within spaces between the plurality of fin structures.