公开(公告)号：US20200027826A1

公开(公告)日：2020-01-23

申请号：US16587270

申请日：2019-09-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： CHIEN-HSIN LEE ,  HAOJUN ZHANG ,  MAHADEVA IYER NATARAJAN

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/60

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

公开(公告)号：US20180286801A1

公开(公告)日：2018-10-04

申请号：US15474354

申请日：2017-03-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： CHIEN-HSIN LEE ,  HAOJUN ZHANG ,  MAHADEVA IYER NATARAJAN

IPC: H01L23/528 ,  H01L23/522

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.