公开(公告)号：US10068859B1

公开(公告)日：2018-09-04

申请号：US15662334

申请日：2017-07-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicholas A. Polomoff ,  Mohamed Rabie ,  Victoria L. Calero Diaz Del Castillo ,  Danielle Degraw ,  Michael Hecker

IPC: H01L23/58 ,  H01L23/00 ,  H01L23/544

Abstract: A structure for arresting the propagation of cracks during the dicing of a semiconductor wafer into individual chips includes a monolithic metallic plate that traverses multiple dielectric layers peripheral to an active region of a chip. One or more metallic plates may be formed using lithography and electroplating techniques between the active device region and a peripheral kerf region, where each metallic plate includes a concave feature that faces the kerf region of the wafer.