公开(公告)号：US20170047425A1

公开(公告)日：2017-02-16

申请号：US14826803

申请日：2015-08-14

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporations ,  STMicroelectronics, Inc.

Inventor： Steven BENTLEY ,  Jody FRONHEISER ,  Xin MIAO ,  Joseph WASHINGTON ,  Pierre MORIN

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L29/06 ,  H01L21/324

CPC classification number: H01L29/66537 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/324 ,  H01L29/0638 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/165

Abstract: A method of performing an early PTS implant and forming a buffer layer under a bulk or fin channel to control doping in the channel and the resulting bulk or fin device are provided. Embodiments include forming a recess in a substrate; forming a PTS layer below a bottom surface of the recess; forming a buffer layer on the bottom surface and on side surfaces of the recess; forming a channel layer on and adjacent to the buffer layer; and annealing the channel, buffer, and PTS layers.

Abstract translation: 提供了一种执行早期PTS植入和在体或鳍通道下形成缓冲层以控制沟道中的掺杂并且产生的体或鳍器件的方法。 实施例包括在基板中形成凹部; 在所述凹部的底表面下方形成PTS层; 在所述凹部的底表面和侧表面上形成缓冲层; 在缓冲层上和邻近缓冲层上形成沟道层; 并对通道，缓冲器和PTS层进行退火。

公开(公告)号：US20190081155A1

公开(公告)日：2019-03-14

申请号：US15703221

申请日：2017-09-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruilong XIE ,  Kangguo CHENG ,  Nicolas LOUBET ,  Xin MIAO ,  Pietro MONTANINI ,  John ZHANG ,  Haigou HUANG ,  Jianwei PENG ,  Sipeng GU ,  Hui ZANG ,  Yi QI ,  Xusheng WU

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A method of forming nanosheet and nanowire transistors includes the formation of alternating epitaxial layers of silicon germanium (SiGe) and silicon (Si), where the germanium content within respective layers of the silicon germanium is systemically varied in order to mediate the selective etching of these layers. The germanium content is controlled such that recessed regions created by partial removal of the silicon germanium layers have uniform lateral dimensions, and the backfilling of such recessed regions with an etch selective material results in the formation of a robust etch barrier.