公开(公告)号：US20210066118A1

公开(公告)日：2021-03-04

申请号：US16553737

申请日：2019-08-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Michel J. Abou-Khalil ,  Aaron Vallett ,  Steven M. Shank ,  Bojidha Babu ,  John J. Ellis-Monaghan ,  Anthony K. Stamper

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/265 ,  H01L29/06

Abstract: Structures including electrical isolation and methods associated with forming such structures. A semiconductor layer has a top surface, a polycrystalline region, and a single-crystal region between the polycrystalline region and the top surface. An isolation band is located beneath the single-crystal region. The isolation band contains a first concentration of an n-type dopant and a second concentration of a p-type dopant, and a net difference between the first concentration and the second concentration is within a range of about five percent to about fifteen percent.