公开(公告)号：US20160372413A1

公开(公告)日：2016-12-22

申请号：US14741636

申请日：2015-06-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Anbu Selvam Mahalingam ,  Ashwini Chandrashekar ,  Craig Child

IPC: H01L23/528 ,  H01L21/311 ,  H01L23/522 ,  H01L21/02 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/5226 ,  H01L23/53238

Abstract: One method includes, among other things, forming a bi-layer etch stop layer above a conductive contact comprised of titanium nitride, the bi-layer etch stop layer consisting of an upper second layer that is made of aluminum nitride, forming a patterned etch mask comprised of a layer of titanium nitride above a second layer of insulating material, with the bi-layer etch stop layer in position above the conductive contact, performing an etching process through the patterned etch mask to define a cavity in the second layer of insulating material, performing a second etching process to remove at least the layer of titanium nitride of the patterned etch mask, forming an opening in the bi-layer etch stop layer so as to thereby expose a portion of the conductive contact and forming a conductive structure in the cavity that is conductively coupled to the exposed portion of the conductive contact.

Abstract translation: 一种方法包括在包括氮化钛的导电接触层之上形成双层蚀刻停止层，双层蚀刻停止层由由氮化铝制成的上部第二层组成，形成图案化的蚀刻掩模 包括在第二绝缘材料层上方的氮化钛层，双层蚀刻停止层位于导电接触点上方的位置，通过图案化的蚀刻掩模执行蚀刻工艺，以在第二绝缘材料层中限定空腔 ，执行第二蚀刻工艺以去除图案化蚀刻掩模的至少所述氮化钛层，在双层蚀刻停止层中形成开口，从而暴露导电接触的一部分并在其中形成导电结构 导电地耦合到导电触点的暴露部分的腔。