公开(公告)号：US20180047727A1

公开(公告)日：2018-02-15

申请号：US15234762

申请日：2016-08-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Charan V. SURISETTY ,  Dominic J. SCHEPIS ,  Kangguo CHENG ,  Alexander REZNICEK

IPC: H01L27/088 ,  H01L21/3105 ,  H01L29/417 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/31053 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L29/41791

Abstract: Electrical shorting between source and/or drain contacts and a conductive gate of a FinFET-based semiconductor structure are prevented by forming the source and drain contacts in two parts, a bottom contact part extending up to a height of the gate cap and an upper contact part situated on at least part of the bottom contact part.