公开(公告)号：US09721949B1

公开(公告)日：2017-08-01

申请号：US15010189

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xusheng Wu ,  Qizhi Liu ,  David Harame ,  Renata Camillo-Castillo

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/324 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/324 ,  H01L21/823821 ,  H01L21/823892

Abstract: A method of making a semiconductor structure is provided including providing a plurality of fins on a semiconductor substrate; depositing a layer containing silicon dioxide on the plurality of fins and on a surface of the semiconductor substrate; depositing a photoresist layer on one or more but less than all of the plurality of fins; etching the layer of silicon dioxide off of one or more of the plurality of fins on which the photoresist layer had not been deposited; stripping the photoresist layer; depositing a layer of pure boron on one or more of the plurality of fins on which a photoresist had not been deposited; and depositing a silicon nitride liner step on the plurality of fins. A partial semiconductor device fabricated by said method is also provided.