公开(公告)号：US20190305105A1

公开(公告)日：2019-10-03

申请号：US15943272

申请日：2018-04-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Qun GAO ,  Christopher NASSAR ,  Sugirtha KRISHNAMURTHY ,  Domingo Antonio FERRER LUPPI ,  John SPORRE ,  Shahab SIDDIQUI ,  Beth BAUMERT ,  Abu ZAINUDDIN ,  Jinping LIU ,  Tae Jeong LEE ,  Luigi PANTISANO ,  Heather LAZAR ,  Hui ZANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/423

Abstract: A method for controlling the gate length within a FinFET device to increase power performance and the resulting device are provided. Embodiments include forming a vertical gate to extend over a plurality of fins; depositing a respective oxide layer over each of a plurality of skirt regions formed at respective points of intersection of the vertical gate with the plurality of fins; and oxidizing each oxide layer to form a plurality of oxidized gate skirts.

公开(公告)号：US20190326112A1

公开(公告)日：2019-10-24

申请号：US15957491

申请日：2018-04-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shahab SIDDIQUI ,  Hamed PARVANEH ,  Mira PARK ,  Annie LEVESQUE ,  Yinxiao YANG ,  Hongyi MI ,  Asli SIRMAN

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/311

Abstract: A method of cleaning a low-k spacer cavity by a low energy RF plasma at a specific substrate temperature for a defect free epitaxial growth of Si, SiGe, Ge, III-V and III-N and the resulting device are provided. Embodiments include providing a substrate with a low-k spacer cavity; cleaning the low-k spacer cavity with a low energy RF plasma at a substrate temperature between room temperature to 600° C.; and forming an epitaxy film or a RSD in the low-k spacer cavity subsequent to the low energy RF plasma cleaning.