公开(公告)号：US10211103B1

公开(公告)日：2019-02-19

申请号：US15787257

申请日：2017-10-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Haigou Huang ,  Dinesh Koli ,  Yuan Zhou ,  Xingzhao Shi ,  Chih-Chiang Chang ,  Tai Fong Chao

IPC: H01L21/28 ,  H01L21/768 ,  H01L29/66 ,  H01L23/522 ,  H01L23/532

Abstract: Methods of forming a SAC cap with SiN U-shaped and oxide T-shaped structures and the resulting devices are provided. Embodiments include forming a substrate with a trench and a plurality of gate structures; forming a nitride liner over portions of the substrate and along sidewalls of each gate structure; forming an ILD between each gate structure and in the trench; recessing each gate structure between the ILD; forming a U-shaped nitride liner over each recessed gate structure; forming an a-Si layer over the nitride liner and the U-shaped nitride liner; removing portions of the nitride liner, the U-shaped nitride liner and the a-Si layer; forming a W layer over portions of the substrate adjacent to and between the a-Si layer; forming an oxide liner over the nitride liner, the U-shaped nitride liner and along sidewalls of the W layer; and forming an oxide layer over portions of the oxide liner.