公开(公告)号：US20240429237A1

公开(公告)日：2024-12-26

申请号：US18340463

申请日：2023-06-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anton TOKRANOV ,  Man GU ,  Eric Scott KOZARSKY ,  George MULFINGER ,  Hong YU

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.

公开(公告)号：US20230146952A1

公开(公告)日：2023-05-11

申请号：US17521076

申请日：2021-11-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： George R. MULFINGER ,  Matthew W. STOKER ,  Ryan W. SPORER ,  Man GU

IPC: H01L29/417 ,  H01L29/16

CPC classification number: H01L29/41783 ,  H01L29/1608

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to transistors with faceted raised source/drain regions and methods of manufacture. The structure includes: a substrate; a gate structure on the substrate; and faceted, raised source/drain regions adjacent to the gate structure and including at least two different semiconductor materials.