公开(公告)号：US10964796B2

公开(公告)日：2021-03-30

申请号：US15427182

申请日：2017-02-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. Stamper ,  Vibhor Jain ,  Renata A. Camillo-Castillo

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L29/737 ,  H01L21/762 ,  H01L29/732

Abstract: According to a semiconductor device herein, the device includes a substrate. An active device is formed in the substrate. The active device includes a collector region, a base region formed on the collector region, and an emitter region formed on the base region. An isolation structure is formed in the substrate around the active device. A trench filled with a compressive material is formed in the substrate and positioned laterally adjacent to the emitter region and base region. The trench extends at least partially into the base region.

公开(公告)号：US20210217874A1

公开(公告)日：2021-07-15

申请号：US17214969

申请日：2021-03-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. Stamper ,  Vibhor Jain ,  Renata A. Camillo-Castillo

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L29/737 ,  H01L21/762

Abstract: According to a semiconductor device herein, the device includes a substrate. An active device is formed in the substrate. The active device includes a collector region, a base region formed on the collector region, and an emitter region formed on the base region. An isolation structure is formed in the substrate around the active device. A trench filled with a compressive material is formed in the substrate and positioned laterally adjacent to the emitter region and base region. The trench extends at least partially into the collector region.

公开(公告)号：US11876123B2

公开(公告)日：2024-01-16

申请号：US17214969

申请日：2021-03-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. Stamper ,  Vibhor Jain ,  Renata A. Camillo-Castillo

IPC: H01L21/762 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L29/737 ,  H01L29/732

CPC classification number: H01L29/66242 ,  H01L21/762 ,  H01L21/76224 ,  H01L29/0603 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66272 ,  H01L29/7371 ,  H01L29/732

Abstract: According to a semiconductor device herein, the device includes a substrate. An active device is formed in the substrate. The active device includes a collector region, a base region formed on the collector region, and an emitter region formed on the base region. An isolation structure is formed in the substrate around the active device. A trench filled with a compressive material is formed in the substrate and positioned laterally adjacent to the emitter region and base region. The trench extends at least partially into the collector region.