Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites

    公开(公告)号:US10683572B2

    公开(公告)日:2020-06-16

    申请号:US16160930

    申请日:2018-10-15

    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.

    SILANE RECIRCULATION FOR RAPID CARBON/SILICON CARBIDE OR SILICON CARBIDE/SILICON CARBIDE CERAMIC MATRIX COMPOSITES

    公开(公告)号:US20200115799A1

    公开(公告)日:2020-04-16

    申请号:US16160930

    申请日:2018-10-15

    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.

    Methods for chemical vapor infiltration and densification of porous substrates

    公开(公告)号:US11639545B2

    公开(公告)日:2023-05-02

    申请号:US16843605

    申请日:2020-04-08

    Abstract: A method of chemical vapor infiltration and deposition includes disposing a porous substrate within a reaction chamber, establishing a sub-atmospheric pressure within the reaction chamber, introducing a hydrocarbon reaction gas into a reaction zone of the reaction chamber to densify the porous substrate, withdrawing unreacted hydrocarbon reaction gas from the reaction chamber, the unreacted hydrocarbon reaction gas comprising hydrocarbon molecules having six or more carbon atoms, removing at least a portion of the hydrocarbon molecules having six or more carbon molecules from the unreacted hydrocarbon reaction gas by causing the portion of the hydrocarbon molecules having six or more carbon atoms to condense, and recirculating at least a portion of the unreacted hydrocarbon reaction gas back into the reaction zone.

    Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites

    公开(公告)号:US11255015B2

    公开(公告)日:2022-02-22

    申请号:US16868424

    申请日:2020-05-06

    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.

    SILANE RECIRCULATION FOR RAPID CARBON/SILICON CARBIDE OR SILICON CARBIDE/SILICON CARBIDE CERAMIC MATRIX COMPOSITES

    公开(公告)号:US20200263302A1

    公开(公告)日:2020-08-20

    申请号:US16868424

    申请日:2020-05-06

    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.

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