公开(公告)号：US20160230304A1

公开(公告)日：2016-08-11

申请号：US15022532

申请日：2014-09-08

Applicant: GRIFFITH UNIVERSITY

Inventor： Francesca IACOPI ,  Mohsin AHMED ,  Benjamin Vaughan CUNNING

IPC: C30B1/02 ,  B81C1/00 ,  C01B31/04 ,  H01L21/02 ,  C30B1/10 ,  C30B29/02

CPC classification number: C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

Abstract: A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

Abstract translation: 一种用于形成石墨烯的方法包括：将至少第一和第二金属沉积到碳化硅（SiC）的表面上，并且在导致第一金属与硅的硅反应的条件下加热SiC和第一和第二金属 碳化硅以形成碳和至少一种稳定的硅化物。 碳在稳定硅化物和第二金属中的相应溶解度足够低，使得由硅化物反应产生的碳在SiC上形成石墨烯层。