公开(公告)号：US11742316B2

公开(公告)日：2023-08-29

申请号：US17897086

申请日：2022-08-26

Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY

Inventor： Yu Zhang ,  Chengqiang Cui ,  Peilin Liang ,  Jin Tong ,  Guannan Yang

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/11015 ,  H01L2224/1181 ,  H01L2224/16227 ,  H01L2224/81007 ,  H01L2224/81055 ,  H01L2224/8184 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/81224 ,  H01L2224/81911 ,  H01L2924/381 ,  H01L2924/3841

Abstract: This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.