公开(公告)号：US20240008271A1

公开(公告)日：2024-01-04

申请号：US17977939

申请日：2022-10-31

Applicant: GenXComm, Inc.

Inventor： Brian Mattis ,  Taran Huffman ,  Bryan Woo ,  Thien-An Ngoc Nguyen

IPC: H01L27/11526 ,  G02B6/43 ,  G02B6/42

CPC classification number: H01L27/11526 ,  G02B6/43 ,  G02B6/4202 ,  G02B6/4277

Abstract: A semiconductor device includes a floating gate that can be charged in a nonvolatile manner. The floating gate is also structured as an optical waveguide, and may be optically coupled to a photonic circuit, such as an interferometer.

公开(公告)号：US20240004133A1

公开(公告)日：2024-01-04

申请号：US18469710

申请日：2023-09-19

Applicant: GenXComm, Inc.

Inventor： Brian Mattis ,  Taran Huffman ,  Bryan Woo ,  Thien-An Nguyen

IPC: G02B6/136

CPC classification number: G02B6/136 ,  G02B2006/12061

Abstract: A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.

公开(公告)号：US11796737B2

公开(公告)日：2023-10-24

申请号：US17177798

申请日：2021-02-17

Applicant: GenXComm, Inc.

Inventor： Brian Mattis ,  Taran Huffman ,  Bryan Woo ,  Thien-An Nguyen

IPC: G02B6/136 ,  G02B6/12

CPC classification number: G02B6/136 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12169 ,  G02B2006/12188 ,  G02B2006/12197

Abstract: A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.