公开(公告)号：US20030183155A1

公开(公告)日：2003-10-02

申请号：US10063164

申请日：2002-03-27

Applicant: General Electric Company

Inventor： Mark Philip D'Evelyn ,  Steven William Webb ,  Suresh Shankarappa Vagarali ,  Yavuz Kadioglu ,  Dong-Sil Park ,  Zheng Chen

IPC: C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC classification number: C30B29/403 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B9/00 ,  C30B29/406 ,  Y10T117/1052 ,  Y10T117/1096

Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

Abstract translation: 一种形成III族金属氮化物的至少一种单晶的方法。 该方法包括以下步骤：向反应容器提供包含至少一种选自铝，铟和镓的III族金属的焊剂材料和源材料; 密封反应容器; 将反应容器加热至预定温度并向容器施加预定压力。 该压力足以在该温度下抑制第III族金属氮化物的分解。 还公开了III族金属氮化物，以及通过该方法形成的具有III族金属氮化物衬底的电子器件。

公开(公告)号：US20040124434A1

公开(公告)日：2004-07-01

申请号：US10329981

申请日：2002-12-27

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Mark Phillip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Peter Micah Sandvik

IPC: H01L033/00

CPC classification number: H01L33/32 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B7/005 ,  C30B29/403 ,  C30B29/406

Abstract: There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 104 cmnull1, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Abstract translation: 提供直径至少约2毫米，位错密度小于约10 -4厘米-1并且没有倾斜边界的GaN单晶。 还公开了形成GaN单晶的方法。 该方法包括在室中提供成核中心，GaN源材料和GaN溶剂。 该室被加压。 在室中产生第一和第二温度分布，使得溶剂在室的成核区域中过饱和。 第一和第二温度分布在室内具有不同的温度梯度。