公开(公告)号：US20240120373A1

公开(公告)日：2024-04-11

申请号：US18045799

申请日：2022-10-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： HONG YU ,  DAVID PRITCHARD

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/808

CPC classification number: H01L29/0649 ,  H01L29/1066 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/66893 ,  H01L29/808

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, a second gate electrode, and an isolation structure. The first gate electrode is over the substrate and the second gate electrode is laterally adjacent thereto. The isolation structure is in contact with the first gate electrode and the second gate electrode.

公开(公告)号：US20240234448A1

公开(公告)日：2024-07-11

申请号：US18151509

申请日：2023-01-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： DAVID PRITCHARD ,  HONG YU ,  ZHIXING ZHAO

IPC: H01L27/13 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L27/13 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a gate electrode, an isolation structure, and an electrode plate. The gate electrode is over the substrate and the isolation structure is in contact with the gate electrode. The electrode plate is in the isolation structure.

公开(公告)号：US20240063225A1

公开(公告)日：2024-02-22

申请号：US17820248

申请日：2022-08-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： DAVID PRITCHARD ,  HONGRU REN ,  SHAFIULLAH SYED ,  HONG YU ,  MAN GU ,  JIANWEI PENG

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/1207 ,  H01L21/84

Abstract: A substrate is provided. The substrate includes a base, a semiconductor layer over the base, and an insulator layer between the base and the semiconductor layer. The semiconductor layer has a first semiconductor layer portion having a first thickness, a second semiconductor layer portion having a second thickness, and a third semiconductor layer portion having a third thickness, and the first thickness, the second thickness, and the third thickness are different from each other.