公开(公告)号：US20240243037A1

公开(公告)日：2024-07-18

申请号：US18154481

申请日：2023-01-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Dewei Xu ,  Zhuojie Wu ,  Daniel Smith

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/528

Abstract: A structure includes a through semiconductor via (TSV) in a semiconductor substrate, and a dielectric liner surrounding the TSV and between the TSV and the semiconductor substrate. A plurality of discontinuous air gaps is in the semiconductor substrate extending away from the dielectric liner, e.g., radially. The discontinuous air gaps reduce the parasitic coupling capacitance and relieve stress in the semiconductor substrate.