公开(公告)号：US20240429127A1

公开(公告)日：2024-12-26

申请号：US18340174

申请日：2023-06-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Dewei Xu ,  Ravi Prakash Srivastava ,  Zhuojie Wu

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/532

Abstract: A structure includes a through semiconductor via (TSV) in a semiconductor substrate. The structure also includes a cavity including a first cavity portion in the semiconductor substrate and surrounding a middle section of the TSV and in direct contact with the TSV. The cavity also includes a plurality of second cavity portions in the semiconductor substrate and surrounding an upper section of the TSV. The semiconductor substrate is between adjacent second cavity portions, creating a bridge portion that provides structural support. The cavity reduces parasitic capacitance.

公开(公告)号：US20240427095A1

公开(公告)日：2024-12-26

申请号：US18338712

申请日：2023-06-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ravi Prakash Srivastava ,  Yusheng Bian ,  Vibhor Jain

IPC: G02B6/42

Abstract: Embodiments of the disclosure provide a multi-substrate coupling for photonic integrated circuits (PICs). Structures of the disclosure may include a first substrate having a first surface. The first surface includes a groove therein. A second substrate has a second surface coupled to the first surface. The second substrate includes a cavity substantially aligned with the groove of the first surface, and a photonic integrated circuit (PIC) structure horizontally distal to the cavity.

公开(公告)号：US20240176067A1

公开(公告)日：2024-05-30

申请号：US18058967

申请日：2022-11-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Yusheng Bian ,  Ravi Prakash Srivastava

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/136 ,  H01L25/16

CPC classification number: G02B6/12004 ,  G02B6/1228 ,  G02B6/136 ,  H01L25/167

Abstract: Structures and methods implement an enlarged multilayer nitride waveguide. The structure may include an inter-level dielectric (ILD) layer over a substrate. A first enlarged multilayer nitride waveguide is positioned in the ILD layer in a region of the substrate. A second multilayer nitride waveguide may also be provided in the ILD layer. A lower cladding layer defines a lower surface of the nitride waveguide(s). The lower cladding layer has a lower refractive index than the nitride waveguide(s). Additional lower refractive index cladding layers can be provided on the upper surface and/or sidewalls of the nitride waveguide(s). The enlarged nitride waveguide may be implemented with other conventional silicon and nitride waveguides.

公开(公告)号：US12276831B2

公开(公告)日：2025-04-15

申请号：US18058967

申请日：2022-11-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Yusheng Bian ,  Ravi Prakash Srivastava

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/136

Abstract: Structures and methods implement an enlarged multilayer nitride waveguide. The structure may include an inter-level dielectric (ILD) layer over a substrate. A first enlarged multilayer nitride waveguide is positioned in the ILD layer in a region of the substrate. A second multilayer nitride waveguide may also be provided in the ILD layer. A lower cladding layer defines a lower surface of the nitride waveguide(s). The lower cladding layer has a lower refractive index than the nitride waveguide(s). Additional lower refractive index cladding layers can be provided on the upper surface and/or sidewalls of the nitride waveguide(s). The enlarged nitride waveguide may be implemented with other conventional silicon and nitride waveguides.

公开(公告)号：US20240231173A1

公开(公告)日：2024-07-11

申请号：US18094716

申请日：2023-01-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vibhor Jain ,  Yusheng Bian ,  Shesh Mani Pandey ,  Abdelsalam Aboketaf ,  Ravi Prakash Srivastava

IPC: G02F1/21 ,  F25B21/04 ,  G02F1/225 ,  H10N10/17 ,  H10N10/851 ,  H10N10/852

CPC classification number: G02F1/212 ,  F25B21/04 ,  G02F1/2257 ,  H10N10/17 ,  H10N10/852 ,  H10N10/8556 ,  G02F2202/10 ,  G02F2203/50

Abstract: Structures including an optical phase shifter and methods of forming a structure including an optical phase shifter. The structure comprises an optical phase shifter including a waveguide core having a first branch and a second branch laterally spaced from the first branch. The structure further comprises a thermoelectric device including a first plurality of pillars and a second plurality of pillars that alternate with the first plurality of pillars in a series circuit. The first plurality of pillars and the second plurality of pillars disposed adjacent to the first branch of the waveguide core, the first plurality of pillars comprises an n-type semiconductor material, and the second plurality of pillars comprises a p-type semiconductor material.

公开(公告)号：US20240192442A1

公开(公告)日：2024-06-13

申请号：US18079523

申请日：2022-12-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ravi Prakash Srivastava ,  Yusheng Bian ,  Shesh Mani Pandey ,  Vibhor Jain

IPC: G02B6/122 ,  G02B6/136

CPC classification number: G02B6/1228 ,  G02B6/136

Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure comprises a substrate, a dielectric layer over the substrate, and a waveguide core over the substrate. The structure further comprises an airgap that extends at least partially through the dielectric layer and that surrounds a plurality of sides of a portion of the waveguide core.

公开(公告)号：US11417525B2

公开(公告)日：2022-08-16

申请号：US16154284

申请日：2018-10-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Martin O'Toole ,  Keith Donegan ,  Brendan O'Brien ,  Hsueh-Chung Chen ,  Terry A. Spooner ,  Craig Child ,  Sean Reidy ,  Ravi Prakash Srivastava ,  Louis Lanzerotti ,  Atsushi Ogino

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L21/768

Abstract: Methods of self-aligned multiple patterning. A hardmask is deposited over an interlayer dielectric layer. A mandrel is formed over the hardmask. A block mask is formed that covers a first lengthwise section of the mandrel and that exposes second and third lengthwise sections of the mandrel. After forming the block mask, the second and third lengthwise sections of the mandrel are removed to define a pattern including respective first and second mandrel lines that are separated from each other by the first lengthwise section of the mandrel. The first mandrel line and the second mandrel line expose respective portions of the hardmask, and the first lengthwise section of the mandrel line covers another portion of the hardmask. The pattern is transferred to the hardmask with an etching process, and subsequently transferred to the interlayer dielectric layer with another etching process.