公开(公告)号：US20250120156A1

公开(公告)日：2025-04-10

申请号：US18378312

申请日：2023-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett T. Cucci ,  Jacob M. DeAngelis ,  Spencer H. Porter ,  Trevor S. Wills ,  Mark D. Levy

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure on the semiconductor substrate; a gate metal connecting to the gate structure; and a field plate connected to a source region of the gate structure. The gate metal and the field plate include a same material.

公开(公告)号：US20250140599A1

公开(公告)日：2025-05-01

申请号：US18385268

申请日：2023-10-30

Applicant: GlobalFoundries U.S. Inc.

Inventor： Jacob M. DeAngelis ,  Trevor S. Wills ,  Mark D. Levy ,  Spencer H. Porter ,  Brett T. Cucci ,  Rajendran Krishnasamy

IPC: H01L21/762 ,  H01L29/04 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures and methods of manufacture. The structure includes: a stack of semiconductor materials; a semiconductor substrate under the stack of semiconductor materials; a trench filled with in insulator material; and a damaged region of the stack of semiconductor materials extending from at least a bottom of the insulator material to the semiconductor substrate.