公开(公告)号：US09871065B2

公开(公告)日：2018-01-16

申请号：US14579965

申请日：2014-12-22

Applicant: Google Inc.

Inventor： Chung Chun Wan ,  Boyd Fowler

IPC: H04N5/33 ,  H01L27/146 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/225

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H04N5/2257 ,  H04N5/332 ,  H04N5/3745 ,  H04N9/045

Abstract: An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.

公开(公告)号：US20160181295A1

公开(公告)日：2016-06-23

申请号：US14579988

申请日：2014-12-22

Applicant: Google Inc.

Inventor： Chung Chun Wan ,  Boyd Fowler

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H04N5/33

CPC classification number: H01L27/1465 ,  G01S7/4816 ,  G01S7/4914 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14641 ,  H04N5/33 ,  H04N5/332 ,  H04N5/35572 ,  H04N5/3742 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045 ,  H04N13/271

Abstract: An image sensor is described. The image sensor includes a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible light photodiodes. The unit cell having a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell having a second capacitor that is coupled to the infra-red photodiode through a transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The unit cell has a back-drain transistor coupled to the infra-red photodiode.

Abstract translation: 描述图像传感器。 图像传感器包括具有包括可见光光电二极管和红外光电二极管的单元的像素阵列。 可见光光电二极管和红外光电二极管耦合到像素阵列的特定列。 单元电池具有耦合到可见光光电二极管的第一电容器，用于存储来自每个可见光光电二极管的电荷。 单元具有读出电路，以在特定列上提供第一电容器的电压。 该单元具有第二电容器，该第二电容器通过传输栅晶体管耦合到红外光电二极管，以在飞行时间曝光期间从红外光电二极管接收电荷。 单元电池具有耦合到红外光电二极管的后漏极晶体管。

公开(公告)号：US09425233B2

公开(公告)日：2016-08-23

申请号：US14579988

申请日：2014-12-22

Applicant: Google Inc.

Inventor： Chung Chun Wan ,  Boyd Fowler

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H04N5/33 ,  H04N5/378 ,  H04N5/374

CPC classification number: H01L27/1465 ,  G01S7/4816 ,  G01S7/4914 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14641 ,  H04N5/33 ,  H04N5/332 ,  H04N5/35572 ,  H04N5/3742 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045 ,  H04N13/271

Abstract: An image sensor is described. The image sensor includes a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible light photodiodes. The unit cell having a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell having a second capacitor that is coupled to the infra-red photodiode through a transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The unit cell has a back-drain transistor coupled to the infra-red photodiode.

Abstract translation: 描述图像传感器。 图像传感器包括具有包括可见光光电二极管和红外光电二极管的单元的像素阵列。 可见光光电二极管和红外光电二极管耦合到像素阵列的特定列。 单元电池具有耦合到可见光光电二极管的第一电容器，用于存储来自每个可见光光电二极管的电荷。 单元具有读出电路，以在特定列上提供第一电容器的电压。 该单元具有第二电容器，该第二电容器通过传输栅晶体管耦合到红外光电二极管，以在飞行时间曝光期间从红外光电二极管接收电荷。 单元电池具有耦合到红外光电二极管的后漏极晶体管。

公开(公告)号：US09741755B2

公开(公告)日：2017-08-22

申请号：US14579906

申请日：2014-12-22

Applicant: Google Inc.

Inventor： Chung Chun Wan ,  Boyd Fowler

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/374 ,  H04N9/04 ,  H04N13/02 ,  H04N5/3745 ,  H04N5/225 ,  H04N5/33

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14656 ,  H04N5/2257 ,  H04N5/332 ,  H04N5/3696 ,  H04N5/37457 ,  H04N9/045 ,  H04N13/254

Abstract: An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor surface respectively coupled between first, second and third visible light photodiode regions and a first capacitance region. The pixel cell unit has a fourth transfer gate transistor gate on the semiconductor surface coupled between a first infrared photodiode region and a second capacitance region.

公开(公告)号：US20160181314A1

公开(公告)日：2016-06-23

申请号：US14579906

申请日：2014-12-22

Applicant: Google Inc.

Inventor： Chung Chun Wan ,  Boyd Fowler

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14656 ,  H04N5/2257 ,  H04N5/332 ,  H04N5/3696 ,  H04N5/37457 ,  H04N9/045 ,  H04N13/254

Abstract: An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor surface respectively coupled between first, second and third visible light photodiode regions and a first capacitance region. The pixel cell unit has a fourth transfer gate transistor gate on the semiconductor surface coupled between a first infrared photodiode region and a second capacitance region.

Abstract translation: 描述了具有像素单元单元的图像传感器。 像素单元单元在分别耦合在第一，第二和第三可见光光电二极管区域和第一电容区域之间的半导体表面上具有第一，第二和第三传输栅极晶体管栅极。 像素单元单元在耦合在第一红外光电二极管区域和第二电容区域之间的半导体表面上具有第四传输栅极晶体管栅极。

公开(公告)号：US20160181298A1

公开(公告)日：2016-06-23

申请号：US14579965

申请日：2014-12-22

Applicant: Google Inc.

Inventor： Chung Chun Wan ,  Boyd Fowler

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/33

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H04N5/2257 ,  H04N5/332 ,  H04N5/3745 ,  H04N9/045

Abstract: An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.

Abstract translation: 描述了具有像素阵列的图像传感器。 像素阵列具有包括可见光光电二极管和红外光电二极管的单位单元。 可见光光电二极管和红外光电二极管耦合到像素阵列的特定列。 单元电池具有耦合到可见光光电二极管的第一电容器以存储来自每个可见光光电二极管的电荷。 单元具有读出电路，以在特定列上提供第一电容器的电压。 单元电池具有通过第一传输栅极晶体管耦合到红外光电二极管的第二电容器，以在飞行时间曝光期间从红外光电二极管接收电荷。 第一电容器通过第二传输栅极晶体管耦合到红外光电二极管，以在飞行时间曝光期间从红外光电二极管接收电荷。