公开(公告)号：US20200227464A1

公开(公告)日：2020-07-16

申请号：US16834121

申请日：2020-03-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Noboru HOSOKAWA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.